Growth of SiC polytypes by the physical vapour transport technique

被引：25
|
作者：
Semmelroth, K [1 ]
Schulze, N [1 ]
Pensl, G [1 ]
机构：
[1] Univ Erlangen Nurnberg, Inst Appl Phys, DE-91058 Erlangen, Germany
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2004年 / 16卷 / 17期
关键词：
D O I：
10.1088/0953-8984/16/17/010
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A brief survey of the development of the sublimation growth of SiC is given. The growth equipment and especially the hot zone of the furnace for the physical vapour transport (PVT) technique are described in detail. In order to grow micropipe-free SiC crystals, near-thermal-equilibrium growth is developed and the individual processing steps are revealed. The essential parameters for the growth of 4H-, 6H-, 15R- and 3C-SiC single crystals are discussed and a survey of the incorporation of donors (N, P) and acceptors (Al, B) during the PVT growth is presented.
引用
收藏
页码：S1597 / S1610
页数：14
相关论文
共 50 条
  • [21] Ionicity of SiC polytypes
    Wellenhofer, G
    Karch, K
    Pavone, P
    Rossler, U
    Strauch, D
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 301 - 304
  • [22] Faster Growth of 6H-SiC Single Crystals by a Physical Vapor Transport Technique with Two Crucibles
    Jikuan Cheng
    Jiqiang Gao
    Junlin Liu
    Jianfeng Yang
    Xian Jiang
    Rui Guo
    Journal of Electronic Materials, 2008, 37 : 721 - 725
  • [23] Faster growth of 6H-SiC single crystals by a physical vapor transport technique with two crucibles
    Cheng, Jikuan
    Gao, Jiqiang
    Liu, Junlin
    Yang, Jianfeng
    Jiang, Xian
    Guo, Rui
    JOURNAL OF ELECTRONIC MATERIALS, 2008, 37 (05) : 721 - 725
  • [24] ZnO micro/nano structures by MOCVD and vapour transport technique: Growth and characterization
    Rusu, E.
    Burlacu, A.
    Ursaki, V.
    Stratan, G.
    Purica, M.
    Budianu, E.
    Monaico, E.
    CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 2007, : 327 - +
  • [25] Growth of ZnO crystals by vapour transport:: Some ways to act on physical properties
    Tena-Zaera, R.
    Martinez-Tomas, C.
    Gomez-Garcia, C. J.
    Munoz-Sanjose, V.
    CRYSTAL RESEARCH AND TECHNOLOGY, 2006, 41 (08) : 742 - 747
  • [26] Evolution of crystal mosaicity during physical vapor transport growth of SiC
    Katsuno, Masakazu
    Ohtani, Noboru
    Fujimoto, Tatsuo
    Aigo, Takashi
    Yashiro, Hirokatsu
    Materials Science Forum, 2002, 389-393 (01) : 55 - 58
  • [27] Thermodynamic analysis of SiC polytype growth by physical vapor transport method
    Kakimoto, K.
    Gao, B.
    Shiramomo, T.
    Nakano, S.
    Nishizawa, Shi-ichi
    JOURNAL OF CRYSTAL GROWTH, 2011, 324 (01) : 78 - 81
  • [28] Growth of large diameter SiC crystals by advanced physical vapor transport
    Anderson, T
    Barrett, D
    Chen, J
    Emorhokpor, E
    Gupta, A
    Hopkins, R
    Souzis, A
    Tanner, C
    Yoganathan, M
    Zwieback, I
    Choyke, WJ
    Devaty, RP
    Yan, F
    SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 9 - 12
  • [29] Self-congruent process of SiC growth by physical vapor transport
    Cherednichenko, DI
    Drachev, RV
    Sudarshan, TS
    JOURNAL OF CRYSTAL GROWTH, 2004, 262 (1-4) : 175 - 181
  • [30] Evolution of crystal mosaicity during physical vapor transport growth of SiC
    Katsuno, M
    Ohtani, N
    Fujimoto, T
    Aigo, T
    Yashiro, H
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 55 - 58
12345