Growth of SiC polytypes by the physical vapour transport technique

被引：25

作者：

Semmelroth, K ^{[1
]}

Schulze, N ^{[1
]}

Pensl, G ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Inst Appl Phys, DE-91058 Erlangen, Germany

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2004年 / 16卷 / 17期

关键词：

D O I：

10.1088/0953-8984/16/17/010

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A brief survey of the development of the sublimation growth of SiC is given. The growth equipment and especially the hot zone of the furnace for the physical vapour transport (PVT) technique are described in detail. In order to grow micropipe-free SiC crystals, near-thermal-equilibrium growth is developed and the individual processing steps are revealed. The essential parameters for the growth of 4H-, 6H-, 15R- and 3C-SiC single crystals are discussed and a survey of the incorporation of donors (N, P) and acceptors (Al, B) during the PVT growth is presented.

引用

页码：S1597 / S1610

页数：14

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