Low-Voltage, Full-Swing InGaZnO-Based Inverters Enabled by Solution-Processed, Ultra-Thin AlxOy

被引：17

作者：

Cai, Wensi ^{[1
]}

Zhang, Jiawei ^{[1
]}

Wilson, Joshua ^{[1
]}

Song, Aimin ^{[1
,2
]}

机构：

[1] Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England

[2] Shandong Univ, Sch Microelect, State Key Lab Crystal Mat, Ctr Nanoelect, Jinan 250100, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 08期

基金：

中国国家自然科学基金; 英国工程与自然科学研究理事会;

关键词：

Full-swing inverters; InGaZnO; one-volt operation; high voltage gain and noise margins; FILM TRANSISTORS; OXIDE-SEMICONDUCTOR; LAYER;

D O I：

10.1109/LED.2019.2924714

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-performance, full-swing inverters implementedwith InGaZnO thin-film transistors (TFTs) have been demonstrated capable of operating at a very low-voltage. The threshold voltage of the load and drive TFTs were modified through careful change of the gate dielectric anodization voltage. Both the load and drive TFTs show excellent electrical properties, including a current ON/OFF ratio > 10(6) and a subthreshold swing close to the theoretical limit. As a result, the inverters show high voltage gains up to 34 at a supply voltage of only 1 V as well as high noise margins> 92% of the theoreticalmaximum. The devices and the fabrication processmight have potential applications in future wearable and disposable electronics where low cost and low power are vital.

引用

页码：1285 / 1288

页数：4

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