Resistive Switching in Pt/Ta2O5/TiN Structure for Nonvolatile Memory Application

被引：0
作者：
Lin, Jian-Yang [1 ]
Chen, Jyun-Hao [2 ]
机构：
[1] Natl Yunlin Univ Sci & Technol, Dept Elect Engn, Touliu 640, Yunlin, Taiwan
[2] Natl Yunlin Univ Sci & Technol, Grad Sch Elect & Optoelect Engn, Yunlin 640, Taiwan
来源：
2013 IEEE 8TH NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC) | 2013年
关键词：
RESISTANCE; FILMS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The bipolar resistive switching characteristics of the Ta2O5-based resistive random access memories with a Pt/Ta2O5/TiN structure are investigated in this work. The proposed device exhibits a small set voltage of 0.76 V. The resistance ratio of ON/OFF state has a good stability with the compliance current of 1 mA and 10mA that is useful for the multi-level data storage application. In addition, good endurance larger than 10(5) cycles under pulse switching operation and retention characteristics up to 10(4) s at room temperature have been achieved in this work.
引用
收藏
页码：20 / 23
页数：4
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