Resistive Switching in Pt/Ta2O5/TiN Structure for Nonvolatile Memory Application

被引：0
|
作者：
Lin, Jian-Yang [1 ]
Chen, Jyun-Hao [2 ]
机构：
[1] Natl Yunlin Univ Sci & Technol, Dept Elect Engn, Touliu 640, Yunlin, Taiwan
[2] Natl Yunlin Univ Sci & Technol, Grad Sch Elect & Optoelect Engn, Yunlin 640, Taiwan
来源：
2013 IEEE 8TH NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC) | 2013年
关键词：
RESISTANCE; FILMS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The bipolar resistive switching characteristics of the Ta2O5-based resistive random access memories with a Pt/Ta2O5/TiN structure are investigated in this work. The proposed device exhibits a small set voltage of 0.76 V. The resistance ratio of ON/OFF state has a good stability with the compliance current of 1 mA and 10mA that is useful for the multi-level data storage application. In addition, good endurance larger than 10(5) cycles under pulse switching operation and retention characteristics up to 10(4) s at room temperature have been achieved in this work.
引用
收藏
页码：20 / 23
页数：4
相关论文
共 50 条
  • [1] Bipolar Resistance Switching Characteristics in TiN/ZnO:Mn/Pt Junctions Developed for Nonvolatile Resistive Memory Application
    Yang, Yu Chao
    Fan, Bo
    Zeng, Fei
    Pan, Feng
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2010, 10 (11) : 7370 - 7373
  • [2] Synergistic Resistive Switching Mechanism of Oxygen Vacancies and Metal Interstitials in Ta2O5
    Zhu, Linggang
    Zhou, Jian
    Guo, Zhonglu
    Sun, Zhimei
    JOURNAL OF PHYSICAL CHEMISTRY C, 2016, 120 (04) : 2456 - 2463
  • [3] Roles of conducting filament and non-filament regions in the Ta2O5 and HfO2 resistive switching memory for switching reliability
    Park, Tae Hyung
    Kim, Hae Jin
    Park, Woo Young
    Kim, Soo Gil
    Choi, Byung Joon
    Hwang, Cheol Seong
    NANOSCALE, 2017, 9 (18) : 6010 - 6019
  • [4] Multi-level resistive switching observations in asymmetric Pt/Ta2O5-x/TiOxNy/TiN/Ta2O5-x/Pt multilayer configurations
    Lee, Ah Rahm
    Bae, Yoon Cheol
    Baek, Gwang Ho
    Im, Hyun Sik
    Hong, Jin Pyo
    APPLIED PHYSICS LETTERS, 2013, 103 (06)
  • [5] Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices
    Yang, Min Kyu
    Park, Jae-Wan
    Ko, Tae Kuk
    Lee, Jeon-Kook
    APPLIED PHYSICS LETTERS, 2009, 95 (04)
  • [6] Resistive Switching in CeOx Films for Nonvolatile Memory Application
    Sun, Xiao
    Sun, Bing
    Liu, Lifeng
    Xu, Nuo
    Liu, Xiaoyan
    Han, Ruqi
    Kang, Jinfeng
    Xiong, Guangcheng
    Ma, T. P.
    IEEE ELECTRON DEVICE LETTERS, 2009, 30 (04) : 334 - 336
  • [7] Design and Fabrication of Ta2O5 Stacks for Discrete Multibit Memory Application
    Zhu, Hao
    Yuan, Hui
    Li, Haitao
    Richter, Curt A.
    Kirillov, Oleg
    Ioannou, Dimitris E.
    Li, Qiliang
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2013, 12 (06) : 1151 - 1157
  • [8] Resistive switching characteristics of Pt/CeOx/TiN memory device
    Ismail, Muhammad
    Talib, Ijaz
    Huang, Chun-Yang
    Hung, Chung-Jung
    Tsai, Tsung-Ling
    Jieng, Jheng-Hong
    Chand, Umesh
    Lin, Chun-An
    Ahmed, Ejaz
    Rana, Anwar Manzoor
    Nadeem, Muhammad Younus
    Tseng, Tseung-Yuen
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (06)
  • [9] Bipolar resistive switching characteristics of atomic layer deposited Nb2O5 thin films for nonvolatile memory application
    Chen, Lin
    Sun, Qing-Qing
    Gu, Jing-Jing
    Xu, Yan
    Ding, Shi-Jin
    Zhang, David Wei
    CURRENT APPLIED PHYSICS, 2011, 11 (03) : 849 - 852
  • [10] Unipolar Nonvolatile Resistive Switching in Pt/MgO/Ta/Ru Structures Deposited by Magnetron Sputtering
    Guerra, L. M.
    Dias, C.
    Pereira, J.
    Lv, H.
    Cardoso, S.
    Freitas, P. P.
    Ventura, J.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2017, 17 (01) : 564 - 567
12345