High-Frequency Microwave Noise Characteristics of InAlN/GaN High-Electron Mobility Transistors on Si (111) Substrate

被引：25

作者：

Arulkumaran, S. ^{[1
]}

Ranjan, K. ^{[1
]}

Ng, G. I. ^{[1
,2
]}

Kumar, C. M. Manoj ^{[1
]}

Vicknesh, S. ^{[1
]}

Dolmanan, S. B. ^{[3
]}

Tripathy, S. ^{[3
]}

机构：

[1] Nanyang Technol Univ, Temasek Labs, Singapore 637553, Singapore

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[3] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 10期

关键词：

InAlN/GaN; GaN-on-silicon; HEMT; NFmin; cut-off frequency; maximum oscillation frequency; linearity; ALGAN/GAN HEMTS; PERFORMANCE; FIGURE;

D O I：

10.1109/LED.2014.2343455

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report for the first time high-frequency microwave noise performance on 0.17-mu m T-gate In0.17Al0.83N/GaN high-electron mobility transistors (HEMTs) fabricated on Si(111). The HEMTs exhibited a maximum drain current density of 1320 mA/mm, a maximum extrinsic transconductance of 363 mS/mm, an unity current gain cutoff frequency (f(T)) of 64 GHz and, a maximum oscillation frequency [f(max)(U)/f(max)(MSG)] of 72/106 GHz. The product f(max)(U) x V-g = 12.24 GHz.mu m is the highest value ever reported for InAlN/GaN HEMTs on Si substrate. At V-d = 4 V and Vg = -2.25 V, the device exhibited a minimum noise figure (NFmin) of 1.16 dB for 10 GHz and 1.76 dB for 18 GHz. Small variation of NFmin(<0.5 dB) from 8% to 48% with IDmax (100-636 mA/mm) was observed.

引用

页码：992 / 994

页数：3

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