Seeding Effects of Sn/a-Ge Island Structures for Low-Temperature Lateral-Growth of a-GeSn on Insulator

被引：0

作者：

Kai, Yuki ^{[1
]}

Chikita, Hironori ^{[1
]}

Matsumura, Ryo ^{[1
,2
]}

Sadoh, Taizoh ^{[1
]}

Miyao, Masanobu ^{[1
]}

机构：

[1] Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan

[2] JSPS, Chiyoda Ku, Tokyo, Japan

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2016年 / 5卷 / 02期

关键词：

CRYSTALLIZATION; ALLOY; SI;

D O I：

10.1149/2.0241602jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Position control of low-temperature solid-phase crystallization in amorphous-GeSn (a-GeSn) films is investigated using a-GeSn films covering Sn/a-Ge stacked islands on insulator. Two-steps annealing has been performed, i.e., first-step annealing (similar to 250 degrees C) to crystallize Sn/a-Ge islands for crystalline-seed formation and second-step annealing (<= 250 degrees C) to proceed lateral-growth from the crystalline-seed. It is found that Sn thickness exceeding similar to 70% of Ge thickness is the essential condition to achieve crystalline GeSn islands (grain size > 10 nm) with the diamond structure. This acts as crystalline-seed enabling the lateral-growth of a-GeSn over 80 mu m. The present process below the softening-temperature (similar to 300 degrees C) of plastic substrates facilitates realization of advanced flexible electronics. (C) 2015 The Electrochemical Society. All rights reserved.

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页码：P76 / P79

页数：4

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