Seeding Effects of Sn/a-Ge Island Structures for Low-Temperature Lateral-Growth of a-GeSn on Insulator

被引:0
作者
Kai, Yuki [1 ]
Chikita, Hironori [1 ]
Matsumura, Ryo [1 ,2 ]
Sadoh, Taizoh [1 ]
Miyao, Masanobu [1 ]
机构
[1] Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan
[2] JSPS, Chiyoda Ku, Tokyo, Japan
关键词
CRYSTALLIZATION; ALLOY; SI;
D O I
10.1149/2.0241602jss
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Position control of low-temperature solid-phase crystallization in amorphous-GeSn (a-GeSn) films is investigated using a-GeSn films covering Sn/a-Ge stacked islands on insulator. Two-steps annealing has been performed, i.e., first-step annealing (similar to 250 degrees C) to crystallize Sn/a-Ge islands for crystalline-seed formation and second-step annealing (<= 250 degrees C) to proceed lateral-growth from the crystalline-seed. It is found that Sn thickness exceeding similar to 70% of Ge thickness is the essential condition to achieve crystalline GeSn islands (grain size > 10 nm) with the diamond structure. This acts as crystalline-seed enabling the lateral-growth of a-GeSn over 80 mu m. The present process below the softening-temperature (similar to 300 degrees C) of plastic substrates facilitates realization of advanced flexible electronics. (C) 2015 The Electrochemical Society. All rights reserved.
引用
收藏
页码:P76 / P79
页数:4
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