共 22 条
Seeding Effects of Sn/a-Ge Island Structures for Low-Temperature Lateral-Growth of a-GeSn on Insulator
被引:0
作者:

Kai, Yuki
论文数: 0 引用数: 0
h-index: 0
机构:
Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan

Chikita, Hironori
论文数: 0 引用数: 0
h-index: 0
机构:
Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan

Matsumura, Ryo
论文数: 0 引用数: 0
h-index: 0
机构:
Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan
JSPS, Chiyoda Ku, Tokyo, Japan Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan

论文数: 引用数:
h-index:
机构:

Miyao, Masanobu
论文数: 0 引用数: 0
h-index: 0
机构:
Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan
机构:
[1] Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan
[2] JSPS, Chiyoda Ku, Tokyo, Japan
关键词:
CRYSTALLIZATION;
ALLOY;
SI;
D O I:
10.1149/2.0241602jss
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Position control of low-temperature solid-phase crystallization in amorphous-GeSn (a-GeSn) films is investigated using a-GeSn films covering Sn/a-Ge stacked islands on insulator. Two-steps annealing has been performed, i.e., first-step annealing (similar to 250 degrees C) to crystallize Sn/a-Ge islands for crystalline-seed formation and second-step annealing (<= 250 degrees C) to proceed lateral-growth from the crystalline-seed. It is found that Sn thickness exceeding similar to 70% of Ge thickness is the essential condition to achieve crystalline GeSn islands (grain size > 10 nm) with the diamond structure. This acts as crystalline-seed enabling the lateral-growth of a-GeSn over 80 mu m. The present process below the softening-temperature (similar to 300 degrees C) of plastic substrates facilitates realization of advanced flexible electronics. (C) 2015 The Electrochemical Society. All rights reserved.
引用
收藏
页码:P76 / P79
页数:4
相关论文
共 22 条
[1]
Ultra-high-speed lateral solid phase crystallization of GeSn on insulator combined with Sn-melting-induced seeding
[J].
Chikita, H.
;
Matsumura, R.
;
Kai, Y.
;
Sadoh, T.
;
Miyao, M.
.
APPLIED PHYSICS LETTERS,
2014, 105 (20)

Chikita, H.
论文数: 0 引用数: 0
h-index: 0
机构:
Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan

Matsumura, R.
论文数: 0 引用数: 0
h-index: 0
机构:
Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan
JSPS, Chiyoda Ku, Tokyo 1020083, Japan Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan

Kai, Y.
论文数: 0 引用数: 0
h-index: 0
机构:
Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan

论文数: 引用数:
h-index:
机构:

Miyao, M.
论文数: 0 引用数: 0
h-index: 0
机构:
Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan
[2]
Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition
[J].
Gallagher, J. D.
;
Senaratne, C. L.
;
Sims, P.
;
Aoki, T.
;
Menendez, J.
;
Kouvetakis, J.
.
APPLIED PHYSICS LETTERS,
2015, 106 (09)

Gallagher, J. D.
论文数: 0 引用数: 0
h-index: 0
机构:
Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

Senaratne, C. L.
论文数: 0 引用数: 0
h-index: 0
机构:
Arizona State Univ, Dept Chem & Biochem, Tempe, AZ 85287 USA Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

Sims, P.
论文数: 0 引用数: 0
h-index: 0
机构:
Arizona State Univ, Dept Chem & Biochem, Tempe, AZ 85287 USA Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

Aoki, T.
论文数: 0 引用数: 0
h-index: 0
机构:
Arizona State Univ, LeRoy Eyring Ctr Solid State Sci, Tempe, AZ 85287 USA Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

Menendez, J.
论文数: 0 引用数: 0
h-index: 0
机构:
Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

Kouvetakis, J.
论文数: 0 引用数: 0
h-index: 0
机构:
Arizona State Univ, Dept Chem & Biochem, Tempe, AZ 85287 USA Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA
[3]
Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6
[J].
Gencarelli, F.
;
Vincent, B.
;
Souriau, L.
;
Richard, O.
;
Vandervorst, W.
;
Loo, R.
;
Caymax, M.
;
Heyns, M.
.
THIN SOLID FILMS,
2012, 520 (08)
:3211-3215

Gencarelli, F.
论文数: 0 引用数: 0
h-index: 0
机构:
IMEC, B-3001 Louvain, Belgium
Katholieke Univ Leuven, MTM, B-3001 Louvain, Belgium IMEC, B-3001 Louvain, Belgium

Vincent, B.
论文数: 0 引用数: 0
h-index: 0
机构:
IMEC, B-3001 Louvain, Belgium IMEC, B-3001 Louvain, Belgium

Souriau, L.
论文数: 0 引用数: 0
h-index: 0
机构:
IMEC, B-3001 Louvain, Belgium IMEC, B-3001 Louvain, Belgium

Richard, O.
论文数: 0 引用数: 0
h-index: 0
机构:
IMEC, B-3001 Louvain, Belgium IMEC, B-3001 Louvain, Belgium

Vandervorst, W.
论文数: 0 引用数: 0
h-index: 0
机构:
IMEC, B-3001 Louvain, Belgium
Katholieke Univ Leuven, ESAT INSYS, B-3001 Louvain, Belgium IMEC, B-3001 Louvain, Belgium

Loo, R.
论文数: 0 引用数: 0
h-index: 0
机构:
IMEC, B-3001 Louvain, Belgium IMEC, B-3001 Louvain, Belgium

Caymax, M.
论文数: 0 引用数: 0
h-index: 0
机构:
IMEC, B-3001 Louvain, Belgium IMEC, B-3001 Louvain, Belgium

Heyns, M.
论文数: 0 引用数: 0
h-index: 0
机构:
IMEC, B-3001 Louvain, Belgium
Katholieke Univ Leuven, MTM, B-3001 Louvain, Belgium IMEC, B-3001 Louvain, Belgium
[4]
Achieving direct band gap in germanium through integration of Sn alloying and external strain
[J].
Gupta, Suyog
;
Magyari-Koepe, Blanka
;
Nishi, Yoshio
;
Saraswat, Krishna C.
.
JOURNAL OF APPLIED PHYSICS,
2013, 113 (07)

Gupta, Suyog
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

Magyari-Koepe, Blanka
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

Nishi, Yoshio
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

Saraswat, Krishna C.
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[5]
Large grain growth of Ge-rich Ge1-xSnx (x ≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing water
[J].
Kurosawa, Masashi
;
Taoka, Noriyuki
;
Ikenoue, Hiroshi
;
Nakatsuka, Osamu
;
Zaima, Shigeaki
.
APPLIED PHYSICS LETTERS,
2014, 104 (06)

Kurosawa, Masashi
论文数: 0 引用数: 0
h-index: 0
机构:
Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
JSPS, Chiyoda Ku, Tokyo 1020083, Japan Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

Taoka, Noriyuki
论文数: 0 引用数: 0
h-index: 0
机构:
Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

Ikenoue, Hiroshi
论文数: 0 引用数: 0
h-index: 0
机构:
Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Fukuoka 8190395, Japan Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

Nakatsuka, Osamu
论文数: 0 引用数: 0
h-index: 0
机构:
Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

论文数: 引用数:
h-index:
机构:
[6]
Single-crystalline laterally graded GeSn on insulator structures by segregation controlled rapid-melting growth
[J].
Kurosawa, Masashi
;
Tojo, Yuki
;
Matsumura, Ryo
;
Sadoh, Taizoh
;
Miyao, Masanobu
.
APPLIED PHYSICS LETTERS,
2012, 101 (09)

Kurosawa, Masashi
论文数: 0 引用数: 0
h-index: 0
机构:
Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan
JSPS, Chiyoda Ku, Tokyo 1028472, Japan Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan

Tojo, Yuki
论文数: 0 引用数: 0
h-index: 0
机构:
Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan

Matsumura, Ryo
论文数: 0 引用数: 0
h-index: 0
机构:
Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan

论文数: 引用数:
h-index:
机构:

Miyao, Masanobu
论文数: 0 引用数: 0
h-index: 0
机构:
Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan
[7]
Raman study of strained Ge1-xSnx alloys
[J].
Lin, Hai
;
Chen, Robert
;
Huo, Yijie
;
Kamins, Theodore I.
;
Harris, James S.
.
APPLIED PHYSICS LETTERS,
2011, 98 (26)

Lin, Hai
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

Chen, Robert
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

Huo, Yijie
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

Kamins, Theodore I.
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

Harris, James S.
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[8]
Thickness Dependent Solid-Phase Crystallization of Amorphous GeSn on Insulating Substrates at Low Temperatures (≤250°C)
[J].
Matsumura, Ryo
;
Sasaki, Masaya
;
Chikita, Hironori
;
Sadoh, Taizoh
;
Miyao, Masanobu
.
ECS SOLID STATE LETTERS,
2015, 4 (12)
:P95-P97

Matsumura, Ryo
论文数: 0 引用数: 0
h-index: 0
机构:
Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan
JSPS, Chiyoda Ku, Tokyo 1028472, Japan Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan

Sasaki, Masaya
论文数: 0 引用数: 0
h-index: 0
机构:
Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan

Chikita, Hironori
论文数: 0 引用数: 0
h-index: 0
机构:
Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan

论文数: 引用数:
h-index:
机构:

Miyao, Masanobu
论文数: 0 引用数: 0
h-index: 0
机构:
Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan
[9]
Growth of Ge1-xSnx heteroepitaxial layers with very high Sn contents on InP(001) substrates
[J].
Nakamura, Marika
;
Shimura, Yosuke
;
Takeuchi, Shotaro
;
Nakatsuka, Osamu
;
Zaima, Shigeaki
.
THIN SOLID FILMS,
2012, 520 (08)
:3201-3205

Nakamura, Marika
论文数: 0 引用数: 0
h-index: 0
机构:
Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

论文数: 引用数:
h-index:
机构:

Takeuchi, Shotaro
论文数: 0 引用数: 0
h-index: 0
机构:
Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

Nakatsuka, Osamu
论文数: 0 引用数: 0
h-index: 0
机构:
Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

论文数: 引用数:
h-index:
机构:
[10]
Development of epitaxial growth technology for Ge1-xSnx alloy and study of its properties for Ge nanoelectronics
[J].
Nakatsuka, Osamu
;
Shimura, Yosuke
;
Takeuchi, Wakana
;
Taoka, Noriyuki
;
Zaima, Shigeaki
.
SOLID-STATE ELECTRONICS,
2013, 83
:82-86

Nakatsuka, Osamu
论文数: 0 引用数: 0
h-index: 0
机构:
Nagoya Univ, Grad Sch Engn, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan Nagoya Univ, Grad Sch Engn, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

论文数: 引用数:
h-index:
机构:

Takeuchi, Wakana
论文数: 0 引用数: 0
h-index: 0
机构:
Nagoya Univ, Grad Sch Engn, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan Nagoya Univ, Grad Sch Engn, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

Taoka, Noriyuki
论文数: 0 引用数: 0
h-index: 0
机构:
Nagoya Univ, Grad Sch Engn, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan Nagoya Univ, Grad Sch Engn, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

论文数: 引用数:
h-index:
机构: