A 248-262 GHz InP HBT VCO with Interesting Tuning Behavior

被引：22

作者：

Yun, Jongwon ^{[1
]}

Kim, Namhyung ^{[1
]}

Yoon, Daekeun ^{[1
]}

Kim, Hyunchul ^{[1
]}

Jeon, Sanggeun ^{[1
]}

Rieh, Jae-Sung ^{[1
]}

机构：

[1] Korea Univ, Sch Elect Engn, Seoul 136713, South Korea

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2014年 / 24卷 / 08期

关键词：

Frequency control; heterojunction bipolar transistors (HBT); voltage-controlled oscillators (VCO);

D O I：

10.1109/LMWC.2014.2324753

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fundamental-mode common-base voltage-controlled oscillator (VCO) based on 250-nm InP heterojunction bipolar transistor (HBT) technology is reported. The VCO, which employs varactors implemented by connecting the base and emitter of npn transistors as tuning components, shows a tuning range of 247.8-262.2 GHz. The output power is greater than 0 dBm over the entire tuning range, and dissipated dc power is around 85 mW. An unexpected tuning behavior was observed, which was shown to arise from the internal parasitic base inductance of the transistors used for varactors in this work.

引用

页码：560 / 562

页数：3

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