Spin polarized tunneling magnetoresistance in the self-doped manganite La0.9MnO3

被引：12

作者：

Patra, M. ^{[1
]}

Roy, A. ^{[1
]}

De, K. ^{[1
]}

Majumdar, S. ^{[1
]}

Giri, S. ^{[1
]}

机构：

[1] Indian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, India

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 21期

关键词：

doping; grain boundaries; lanthanum compounds; localised states; spin polarised transport; tunnelling magnetoresistance; COLOSSAL MAGNETORESISTANCE; TRANSPORT-PROPERTIES; GRAIN-BOUNDARY; DEPENDENCE; FIELDS; FILMS;

D O I：

10.1063/1.3147873

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observe the tunneling magnetoresistance (TMR) at low temperature (T) and low field attributed to the self-doping in polycrystalline La0.9MnO3. The occurrence of TMR is suggested due to the tunneling through the grain boundary (GB) region. Tunneling component of the magnetoresistance ascribed to the disordered magnetic GB region follows the Curie-Weiss-like T dependence. The nonlinear current-voltage curves at low T indicate that the inelastic tunneling via localized states involved with the GB effect is dominant where at low temperature the number of inelastic channels and the fraction of charge carriers entering in each inelastic channel change with temperature.

引用

页数：3

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