Measurement of third-order nonlinear susceptibility tensor in InP using extended Z-scan technique with elliptical polarization

被引:2
作者
Oishi, Masaki [1 ]
Shinozaki, Tomohisa [1 ]
Hara, Hikaru [1 ]
Yamamoto, Kazunuki [1 ]
Matsusue, Toshio [1 ]
Bando, Hiroyuki [1 ]
机构
[1] Chiba Univ, Grad Sch Adv Integrat Sci, Dept Nanomat Sci, Chiba 2638522, Japan
关键词
2-PHOTON ABSORPTION-SPECTRA; ZINCBLENDE SEMICONDUCTORS; SINGLE-BEAM; UNDOPED INP; ANISOTROPY; REFRACTION; COEFFICIENTS;
D O I
10.7567/JJAP.57.050306
中图分类号
O59 [应用物理学];
学科分类号
摘要
The elliptical polarization dependence of the two-photon absorption coefficient beta in InP has been measured by the extended Z-scan technique for thick materials in the wavelength range from 1640 to 1800 nm. The analytical formula of the Z-scan technique has been extended with consideration of multiple reflections. The Z-scan results have been fitted very well by the formula and beta has been evaluated accurately. The three independent elements of the third-order nonlinear susceptibility tensor in InP have also been determined accurately from the elliptical polarization dependence of beta. (C) 2018 The Japan Society of Applied Physics
引用
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页数:4
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