Characterization of YbNi4(P1-xAsx)2, x=0, 0.2 single crystals grown by Czochralski method

被引：2
|
作者：
Kliemt, K. [1 ]
Krellner, C. [1 ]
机构：
[1] Goethe Univ Frankfurt, Inst Phys, Max von Laue Str 1, D-60438 Frankfurt, Germany
来源：
INTERNATIONAL CONFERENCE ON STRONGLY CORRELATED ELECTRON SYSTEMS (SCES 2016) | 2017年 / 807卷
关键词：
D O I：
10.1088/1742-6596/807/3/032005
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have investigated large single crystals of YbNi4P2 that were grown from a levitating melt by the Czochralski method. The new samples facilitate the determination of the absolute values of the electrical resistivity. Phase pure polycrystalline samples of the non-magnetic reference LuNi4P2 were prepared and the electrical resistivity was measured. Furthermore we have grown a single crystal of the As substituted compound YbNi4 (P1-xAsx)(2), x = 0.2 and investigated the homogenity of the As distribution.
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页数：5
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