Enhancement of the light-scattering ability of Ga-doped ZnO thin films using SiOx nano-films prepared by atmospheric pressure plasma deposition system

被引：18

作者：

Chang, Kow-Ming ^{[1
,2
]}

Ho, Po-Ching ^{[1
,2
]}

Ariyarit, Atthaporn ^{[1
,2
]}

Yang, Kuo-Hui ^{[3
]}

Hsu, Jui-Mei ^{[3
]}

Wu, Chin-Jyi ^{[3
]}

Chang, Chia-Chiang ^{[3
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan

[3] Ind Technol Res Inst, Mech & Syst Res Labs, Hsinchu 31040, Taiwan

来源：

THIN SOLID FILMS | 2013年 / 548卷

关键词：

Transparent conductive oxide; Light-trapping effect; Atmospheric pressure plasma; TEMPERATURE;

D O I：

10.1016/j.tsf.2013.09.082

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

To enhance the light-trapping qualities of silicon thin-film solar cells, the use of transparent conductive oxide with high haze and high conductivity is essential. This study investigated an eco-friendly technique that used bilayer Ga-doped zinc oxide/SiOx films prepared with an atmospheric pressure plasma jet to achieve high haze and low resistivity. A minimum resistivity of 6.00 x 10(-4) Omega.cm was achieved at 8 at.% gallium doping. Examination of X-ray diffraction spectra showed that increased film thickness led to increased carrier concentration in GZO bilayers. The optimal bilayer GZO film achieved considerably higher haze values in the visible and NIR regions, compared with Asahi U-type fluorine doped tin oxide. (C) 2013 Elsevier B. V. All rights reserved.

引用

页码：460 / 464

页数：5

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