Underlayer and substrate effects in RF-magnetron sputtered barium ferrite thin film media

被引:18
作者
Wee, ATA
Wang, JP
Huan, ACH
Tan, LP
Gopalakrishnan, R
Tan, KL
机构
[1] NATL UNIV SINGAPORE,DATA STORAGE INST,SINGAPORE 119260,SINGAPORE
[2] NATL UNIV SINGAPORE,INST MICROELECT,SINGAPORE 119260,SINGAPORE
关键词
D O I
10.1109/20.617819
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effect of employing various sputtered underlayers and commercially available substrates in order to optimize the characteristics of barium ferrite (BaM) thin films for magnetic recording media have been studied. Our results show that the choice of underlayer or substrate controls the resultant surface morphology and magnetic properties of the BaM film. In particular, it was found that barium ferrite thin films with high coercivity, good squareness, low switching field distribution (> 5000 Oe, 0.92, and 0.58, respectively) and possessing a c-axis in-plane orientation texture were achieved when deposited on an amorphous sputtered underlayer of Al2O3. In addition, the use of an Al2O3 underlayer results in equiaxial barium ferrite grains which may allow a favorable reduction in intergranular interaction as evidenced by the characteristic Delta M curves.
引用
收藏
页码:2986 / 2988
页数:3
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