Monolithically-Integrated Mulitlevel Inverter on Lateral GaN-on-Si Technology for High-Voltage Applications

被引：12

作者：

Weiss, B. ^{[1
]}

Reiner, R. ^{[1
]}

Waltereit, P. ^{[1
]}

Mueller, S. ^{[1
]}

Wespel, M. ^{[1
]}

Quay, R. ^{[1
]}

Ambacher, O. ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, IAF, Tullastr 72, D-79108 Freiburg, Germany

来源：

2015 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS) | 2015年

关键词：

AlGaN/GaN-on-Si; HEMT; multilevel converter; power conversion; lateral monolithic integration;

D O I：

10.1109/CSICS.2015.7314516

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work reports on the development of a fully integrated monolithic single-phase diode-clamped multilevel (DCM) converter in a high-voltage AlGaN/GaN-on-Si technology for high-power conversion applications. The power chip operates as an inverter (DC/AC) to produce a three-level output voltage from a DC link as well as a rectifier (AC/DC) to feed a DC link with a desired voltage. The application range, the topology, and the design of the inverter are presented in detail. The integrated inverter circuit is dimensioned for Umax = +/- 400 V and I-max = 5 A. Furthermore measurements of the performance of the single devices on the integrated chip are demonstrated.

引用

页数：4

共 6 条

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[3] Gonzalez SA, 2014, IND ELECTR SERIES, P1
[4] Liang J., 2013, 15 EUR C POW EL APPL
[5] Reiner R, 2015, PROC INT SYMP POWER, P45, DOI 10.1109/ISPSD.2015.7123385
[6] GaN-based high voltage transistors for efficient power switching
Waltereit, Patrick
Reiner, Richard
Czap, Heiko
Peschel, Detlef
Mueller, Stefan
Quay, Ruediger
Mikulla, Michael
Ambacher, Oliver
[J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 5, 2013, 10 (05): : 831 - 834

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