A Driving Method of Pixel Circuit Using a-IGZO TFT for Suppression of Threshold Voltage Shift in AMLED Displays

被引：44

作者：

Shin, Woo-Sul ^{[1
]}

Ahn, Hyun-A ^{[1
]}

Na, Jun-Seok ^{[1
]}

Hong, Seong-Kwan ^{[1
]}

Kwon, Oh-Kyong ^{[1
]}

Lee, Ji-Hun ^{[2
]}

Um, Jea-Gwang ^{[2
]}

Jang, Jin ^{[2
]}

Kim, Sung-Hwan ^{[3
]}

Lee, Jeong-Soo ^{[3
]}

机构：

[1] Hanyang Univ, Dept Elect Engn, Seoul 133791, South Korea

[2] Kyung Hee Univ, Dept Informat Display, Adv Display Res Ctr, Seoul 02447, South Korea

[3] LG Elect, Mat & Devices Adv Res Inst, Seoul 06763, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 06期

关键词：

mu LED; compensation; AMLED; a-IGZO TFT; stretched exponential model; V-th shift suppression; SI-H TFT; V-TH;

D O I：

10.1109/LED.2017.2699669

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A driving method of pixel circuit using amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) is proposed to improve the image quality of active matrix light-emitting diode displays. The proposed pixel circuit employs a diode-connected structure to compensate for variation in threshold voltage (V-th) of the a-IGZO TFT. In addition, the proposed driving method adopts negative bias annealing to suppress the V-th shift. The annealing time is optimized based on the experimental observation of the minimum V-th shift. After a stress time of 30 000 s, the measurement results showthat the (Vth) shift is reducedby 29.6%, using an optimized annealing time of 5% of one frame time. In addition, the maximum deviation in the emission current using the proposed driving method wasmeasured to be less than 4.32% after a stress time of 30 000 s.

引用

页码：760 / 762

页数：3

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