Single phase formation of Co-implanted ZnO thin films by swift heavy ion irradiation: Optical studies

被引：42
|
作者：
Kumar, Ravi
Singh, Fouran
Angadi, Basavaraj
Choi, Ji-Won
Choi, Won-Kook
Jeong, Kwangho
Song, Jong-Han
Khan, M. Wasi
Srivastava, J. P.
Kumar, Ajay
Tandon, R. P.
机构：
[1] Inter Univ Accelerator Ctr, Div Sci Mat, New Delhi 110067, India
[2] Korea Inst Sci & Technol, Thin Films Mat Res Ctr, Seoul 130650, South Korea
[3] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
[4] Korea Inst Sci & Technol, Adv Anal Ctr, Seoul 130650, South Korea
[5] Aligarh Muslim Univ, Dept Phys, Aligarh 202002, Uttar Pradesh, India
[6] Univ Delhi, Dept Phys & Astrophys, Delhi 110007, India
来源：
JOURNAL OF APPLIED PHYSICS | 2006年 / 100卷 / 11期
关键词：
D O I：
10.1063/1.2399893
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Low temperature photoluminescence and optical absorption studies on 200 MeV Ag+15 ion irradiated Co-implanted ZnO thin films were studied. The Co clusters present in as implanted samples were observed to be dissolved using 200 MeV Ag+15 ion irradiation with a fluence of 1x10(12) ions/cm(2). The photoluminescence spectrum of pure ZnO thin film was characterized by the I-4 peak due to the neutral donor bound excitons and the broad green emission. The Co-doped ZnO films show three sharp levels and two shoulders corresponding to 3t(2g) and 2e(g) levels of crystal field splitted Co d orbitals, respectively. The ultraviolet-visible absorption spectroscopy also shows the systematic variation of band gap after 200 MeV Ag+15 ion irradiation. (c) 2006 American Institute of Physics.
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页数：5
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