Preparation of TiO2 films having superior optical and structural characteristics was attempted using a conventional rf magnetron sputtering by modifying deposition variables, such as the substrate temperature and the gas composition in the sputtering ambient. TiO2 films grown without O-2 addition showed considerable optical loss due to the optical absorption by an oxygen deficiency in the film and the scattering by large surface roughness. However, TiO2 films grown with O-2 addition had a stoichiometric composition and a smooth surface morphology without optical loss. Substrate heating during deposition enhanced the packing density and crystallinity of the film, and as a result, TiO2 films with higher refractive index and better homogeneity could be obtained with substrate heating between 200 degreesC and 400 degreesC.
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Mar Ivanios Coll, Thin Film Lab, Post Grad & Res Dept Phys, Thiruvananthapuram 695015, Kerala, IndiaMar Ivanios Coll, Thin Film Lab, Post Grad & Res Dept Phys, Thiruvananthapuram 695015, Kerala, India
Nair, Prabitha B.
Justinvictor, V. B.
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Mar Ivanios Coll, Thin Film Lab, Post Grad & Res Dept Phys, Thiruvananthapuram 695015, Kerala, IndiaMar Ivanios Coll, Thin Film Lab, Post Grad & Res Dept Phys, Thiruvananthapuram 695015, Kerala, India
Justinvictor, V. B.
Daniel, Georgi P.
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Mar Ivanios Coll, Thin Film Lab, Post Grad & Res Dept Phys, Thiruvananthapuram 695015, Kerala, IndiaMar Ivanios Coll, Thin Film Lab, Post Grad & Res Dept Phys, Thiruvananthapuram 695015, Kerala, India
Daniel, Georgi P.
Joy, K.
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Mar Ivanios Coll, Thin Film Lab, Post Grad & Res Dept Phys, Thiruvananthapuram 695015, Kerala, IndiaMar Ivanios Coll, Thin Film Lab, Post Grad & Res Dept Phys, Thiruvananthapuram 695015, Kerala, India
Joy, K.
Thomas, P. V.
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Mar Ivanios Coll, Thin Film Lab, Post Grad & Res Dept Phys, Thiruvananthapuram 695015, Kerala, IndiaMar Ivanios Coll, Thin Film Lab, Post Grad & Res Dept Phys, Thiruvananthapuram 695015, Kerala, India
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Anhui Univ, Sch Phys & Mat Sci, Hefei 230039, Peoples R China
Dalian Univ Technol, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China
Anhui Univ, Anhui Key Lab Informat Mat & Devices, Hefei 230039, Peoples R ChinaAnhui Univ, Sch Phys & Mat Sci, Hefei 230039, Peoples R China
Meng, Fanming
Lu, Fei
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Anhui Univ, Sch Phys & Mat Sci, Hefei 230039, Peoples R China
Anhui Univ, Anhui Key Lab Informat Mat & Devices, Hefei 230039, Peoples R ChinaAnhui Univ, Sch Phys & Mat Sci, Hefei 230039, Peoples R China