ESD protection of RF circuits in standard CMOS process

被引：0
|
作者：
Higashi, K [1 ]
Adan, AO [1 ]
Fukumi, M [1 ]
Tanba, N [1 ]
Yoshimasu, T [1 ]
Hayashi, M [1 ]
机构：
[1] Sharp Co Ltd, IC Dev Grp, Design Technol Dev Ctr, Tenri, Nara 6328567, Japan
来源：
2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2002年
关键词：
D O I：
10.1109/MWSYM.2002.1011551
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The tradeoffs in the ESD protection device for RFCMOS circuits are described, and the characteristics of an SCR-based ESD structure are presented. The parasitic capacitance of the ESD structure is reduced to similar to150fF. 3kV HBM and 750V CDM are achieved in a LNA working at 2.5GHz with NF<4dB, applicable for Bluetooth wireless transceiver.
引用
收藏
页码：31 / 34
页数：4
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