Complementary Oxide-Semiconductor-Based Circuits With n-Channel ZnO and p-Channel SnO Thin-Film Transistors

被引：57

作者：

Chiu, I-Chung ^{[1
]}

Li, Yun-Shiuan ^{[1
]}

Tu, Min-Sheng ^{[1
]}

Cheng, I-Chun ^{[1
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Dept Elect Engn, Taipei 10617, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 12期

关键词：

Complementary thin-film transistor; inverter; ring oscillator; tin monoxide (SnO); zinc oxide (ZnO); MOBILITY;

D O I：

10.1109/LED.2014.2364578

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fully oxide thin-film transistor (TFT)-based complementary metal-oxide-semiconductor (CMOS) ring oscillators are reported, for the first time, using large-area-compatible sputtering processes. The p-channel tin monoxide (SnO) and n-channel zinc oxide (ZnO) TFTs used in the CMOS inverter have inverted-staggered bottom-gate structures. The SnO TFT exhibits a threshold voltage (V-th) of 3.5 V, field-effect mobility of 0.33 cm(2)/V-s, subthreshold swing of 2.5 V/decade, and ON/OFF current ratio of similar to 10(3). The corresponding values for the ZnO TFT are 6.22 V, 3.5 cm(2)/V-s, 350 mV/decade, and >10(6). The achieved voltage gain of the CMOS inverters is similar to 17 at a supplied voltage (V-DD) of 10 V when the geometric aspect ratio is 5. An oscillation frequency of 2 kHz is obtained from a five-stage oxide-based CMOS voltage control oscillator at (V-DD) of 14 V.

引用

页码：1263 / 1265

页数：3

共 26 条

[1]

[Anonymous], APPL PHYS LETT

[2] Complementary Thin-Film Electronics Based on n-Channel ZnO and p-Channel ZnTe [J].

Bowen, Willie E. ;

Wang, Weiming ;

Phillips, Jamie D. .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (12) :1314-1316

[3] Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors [J].

Caraveo-Frescas, J. A. ;

Alshareef, H. N. .

APPLIED PHYSICS LETTERS, 2013, 103 (22)

[4] Record Mobility in Transparent p-Type Tin Monoxide Films and Devices by Phase Engineering [J].

Caraveo-Frescas, Jesus A. ;

Nayak, Pradipta K. ;

Al-Jawhari, Hala A. ;

Granato, Danilo B. ;

Schwingenschloegl, Udo ;

Alshareeft, Husam N. .

ACS NANO, 2013, 7 (06) :5160-5167

[5] Gate-Bias Stress Stability of P-Type SnO Thin-Film Transistors Fabricated by RF-Sputtering [J].

Chiu, I-Chung ;

Cheng, I-Chun .

IEEE ELECTRON DEVICE LETTERS, 2014, 35 (01) :90-92

[6]

Chu C.-W., 2008, APPL PHYS LETT, V92

[7] Full swing logic inverter with amorphous SiInZnO and GaInZnO thin film transistors [J].

Debnath, Pulak Chandra ;

Lee, Sang Yeol .

APPLIED PHYSICS LETTERS, 2012, 101 (09)

[8] Metal-oxide complementary inverters with a vertical geometry fabricated on flexible substrates [J].

Dindar, A. ;

Kim, J. B. ;

Fuentes-Hernandez, C. ;

Kippelen, B. .

APPLIED PHYSICS LETTERS, 2011, 99 (17)

[9] Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing [J].

Fortunato, Elvira ;

Barros, Raquel ;

Barquinha, Pedro ;

Figueiredo, Vitor ;

Park, Sang-Hee Ko ;

Hwang, Chi-Sun ;

Martins, Rodrigo .

APPLIED PHYSICS LETTERS, 2010, 97 (05)

[10] Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature [J].

Fortunato, EMC ;

Barquinha, PMC ;

Pimentel, ACMBG ;

Gonçalves, AMF ;

Marques, AJS ;

Martins, RFP ;

Pereira, LMN .

APPLIED PHYSICS LETTERS, 2004, 85 (13) :2541-2543

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