TOF SIMS induced artificial topographical effects on the Y2(Al,Ga)5O12:Tb3+ thin films deposited on Si substrates by the pulsed laser deposition technique

被引:5
|
作者
Yousif, A. [1 ,2 ]
Jafer, R. M. [1 ,2 ]
Terblans, J. J. [1 ]
Ntwaeaborwa, O. M. [1 ]
Duvenhage, M. M. [1 ]
Kumar, Vinod [1 ]
Swart, H. C. [1 ]
机构
[1] Univ Free State, Dept Phys, ZA-9300 Bloemfontein, South Africa
[2] Univ Khartoum, Fac Educ, Dept Phys, Omdurman 11115, Sudan
基金
新加坡国家研究基金会;
关键词
Y-3(Al; Ga)(5)O-12:Tb; Agglomerated particles; TOF-SIMS; Topography; ABLATION;
D O I
10.1016/j.apsusc.2014.06.016
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The presence of various types of particles on the surface of the pulsed laser deposited (PLD) thin films as well as the differences in the film structure, played an important role to induce artificial topographical effects on Y-3(Al,Ga)(5)O-12:Tb3+ PLD thin films deposited on Si substrates measured by time-of-flight secondary ion mass spectroscopy (TOF-SIMS). The two and three-dimensional (2D and 3D) images have been recorded in the positive ion mode. Analysis of the 3D images shows big agglomerated particles on the surface of the Si substrate that appears to be embedded in the substrate and the substrate appears to be on the same level as the particles. This phenomenon is due to the artificial topographic effects which are attributed to the experimental setup of the TOP-SIMS system. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:524 / 531
页数:8
相关论文
共 50 条
  • [21] Preferential growth of perovskite BaTiO3 thin films on Gd3Ga5O12(100) and Y3Fe5O12(100) oriented substrates by pulsed laser deposition
    Ruf, Thomas
    Merker, Stefan
    Syrowatka, Frank
    Trempler, Philip
    Schmidt, Georg
    Lorenz, Michael
    Grundmann, Marius
    Denecke, Reinhard
    MATERIALS ADVANCES, 2022, 3 (12): : 4920 - 4931
  • [22] Thickness of Ta2O5 thin-films deposited by a new pulsed laser deposition technique
    Inoue, N
    Monnaka, T
    Kashiwabara, S
    Fujimoto, R
    APPLIED SURFACE SCIENCE, 1998, 127 : 536 - 539
  • [23] The effects of substrates and deposition parameters on the growing and luminescent properties of Y3Al5O12:Ce thin films
    Kim, JW
    Kim, YJ
    OPTICAL MATERIALS, 2006, 28 (6-7) : 698 - 702
  • [24] Influence of deposition atmosphere on the structural and photoluminescence properties of pulsed laser deposited (Y-Gd)3Al5O12: Ce3+ thin films
    Korir, P. C.
    Dejene, F. B.
    Chenene, M. L.
    Munguti, L. K.
    MATERIALS CHEMISTRY AND PHYSICS, 2020, 243 (243)
  • [25] Pulsed laser deposition of Eu:Y2O3 thin films on (0001) α-Al2O3
    Bär, S
    Huber, G
    Gonzalo, J
    Perea, A
    Munz, M
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 80 (02): : 209 - 216
  • [26] Pulsed laser deposition of Eu:Y2O3 thin films on (0001) α-Al2O3
    S. Bär
    G. Huber
    J. Gonzalo
    A. Perea
    M. Munz
    Applied Physics A, 2005, 80 : 209 - 216
  • [27] PbFe12O19 thin films prepared by pulsed laser deposition on Si/SiO2 substrates
    Díaz-Castañón, S
    Leccabue, F
    Watts, BE
    Yapp, R
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2000, 220 (01) : 79 - 84
  • [28] Microstructures of pulsed laser deposited Eu doped Y2O3 luminescent films on Si(001) substrates
    Kim, SS
    Moon, JH
    Lee, BT
    Sohn, KS
    Kang, TS
    Je, JH
    APPLIED SURFACE SCIENCE, 2004, 221 (1-4) : 231 - 236
  • [29] Growth of Nd:Gd3Ga5O12 Thin Films by Pulsed Laser Deposition for Planar Waveguide Laser
    Ganser, Dimitri
    Starovoytova, Larisa
    Wortmann, Dirk
    Gottmann, Jens
    Vasilief, Ion
    Moiseev, Leonid
    JOURNAL OF LASER MICRO NANOENGINEERING, 2008, 3 (01): : 19 - 23
  • [30] Pulsed laser deposition of ZnGa2O4 thin films on Al2O3 and Si substrates for deep optoelectronic devices applications
    Guo, Anqi
    Zhang, Lichun
    Cao, Ning
    Lu, Taiping
    Zhu, Yadan
    Zhou, Zhiying
    He, Shunli
    Xia, Bin
    Zhao, Fengzhou
    APPLIED PHYSICS EXPRESS, 2023, 16 (02)