TOF SIMS induced artificial topographical effects on the Y2(Al,Ga)5O12:Tb3+ thin films deposited on Si substrates by the pulsed laser deposition technique

被引：5

作者：

Yousif, A. ^{[1
,2
]}

Jafer, R. M. ^{[1
,2
]}

Terblans, J. J. ^{[1
]}

Ntwaeaborwa, O. M. ^{[1
]}

Duvenhage, M. M. ^{[1
]}

Kumar, Vinod ^{[1
]}

Swart, H. C. ^{[1
]}

机构：

[1] Univ Free State, Dept Phys, ZA-9300 Bloemfontein, South Africa

[2] Univ Khartoum, Fac Educ, Dept Phys, Omdurman 11115, Sudan

来源：

APPLIED SURFACE SCIENCE | 2014年 / 313卷

基金：

新加坡国家研究基金会;

关键词：

Y-3(Al; Ga)(5)O-12:Tb; Agglomerated particles; TOF-SIMS; Topography; ABLATION;

D O I：

10.1016/j.apsusc.2014.06.016

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The presence of various types of particles on the surface of the pulsed laser deposited (PLD) thin films as well as the differences in the film structure, played an important role to induce artificial topographical effects on Y-3(Al,Ga)(5)O-12:Tb3+ PLD thin films deposited on Si substrates measured by time-of-flight secondary ion mass spectroscopy (TOF-SIMS). The two and three-dimensional (2D and 3D) images have been recorded in the positive ion mode. Analysis of the 3D images shows big agglomerated particles on the surface of the Si substrate that appears to be embedded in the substrate and the substrate appears to be on the same level as the particles. This phenomenon is due to the artificial topographic effects which are attributed to the experimental setup of the TOP-SIMS system. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：524 / 531

页数：8

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