Dielectric properties and energy-storage performance of (Na0.5Bi0.5) TiO3 thick films

被引：85

作者：

Zhao, Ye ^{[1
]}

Hao, Xihong ^{[1
]}

Li, Meiling ^{[2
]}

机构：

[1] Inner Mongolia Univ Sci & Technol, Sch Met & Mat, Baotou 014010, Peoples R China

[2] Inner Mongolia Univ, Coll Phys & Technol, Hohhot 010020, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2014年 / 601卷

基金：

中国国家自然科学基金;

关键词：

10.1016/ j.jaNBT thick films; Sol-gel; Energy-storage performance; Leakage current; LEAKAGE CURRENT BEHAVIOR; ELECTRICAL-PROPERTIES; MICROSTRUCTURE; SYSTEM; GLASS;

D O I：

10.1016/j.jallcom.2014.02.137

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Lead- free ferroelectric Na-0.Bi-5(0).5TiO3 (NBT) thick films were successfully fabricated on LaNiO3/Si (100) substrates by using a polyvinylpyrrolidone (PVP)- modified sol-gel technique. The dielectric properties, energy-storage performance and leakage current characteristics were investigated in detail. At 100 kHz, the capacitance density of the NBT thick films was 295 nF/ cm2. The maximum recoverable energy- storage density and efficiency of the sample were 12.4 J/cm(2) and 43% at 1200 kV/ cm, respectively. A low leakage current density of about 1 x 10 5 A/cm(2) was also obtained at 700 kV/cm at room temperature. These results indicated that the lead- free ferroelectric NBT thick films might be the promising candidates for high energy- storage capacitors application.

引用

页码：112 / 115

页数：4

共 37 条

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