Structural characterization and luminescence of Ge/Si quantum dots

被引：1
作者：
Fonseca, A [1 ]
Sobolev, NA
Leitao, JP
Carmo, MC
Franco, N
Presting, H
Sequeira, AD
机构：
[1] Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal
[2] ITN, P-2686953 Sacavem, Portugal
[3] Byelarussian Acad Sci, Inst Solid State & Semicond Phys, Minsk 220072, BELARUS
[4] Daimler Chrysler Res Ctr, D-89081 Ulm, Germany
来源：
ADVANCED MATERIALS FORUM II | 2004年 / 455-456卷
关键词：
quantum dots (QD); photoluminescence; X-ray reflectometry; reciprocal space maps;
D O I：
10.4028/www.scientific.net/MSF.455-456.540
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The photoluminescence (PL) and structural characterization of Ge/Si quantum dots (QD) samples grown by MBE is presented. The structural characterization was performed by means of high-resolution X-ray diffraction (reciprocal space mapping and rocking curves) and model-fitting of X-ray reflectometry. The observation of a diffraction peak associated with the QDs made possible the determination of their average Ge concentration. The PL measurements identified two subsets of QD. The dependence of the QD emission intensity on the measurement temperature can be well explained by the calculated density of states published previously [9].
引用
收藏
页码：540 / 544
页数：5
相关论文
共 50 条
[31]   Optical and structural behaviour of InAs quantum dots grown on the Si substrate without Si-Ge graded layer and without Migration Enhanced Epitaxy layer [J].
Kumar, Ravinder ;
Panda, Debiprasad ;
Saha, Jhuma ;
Dongre, Suryansh ;
Gazi, Sanowar Alam ;
Chakrabarti, Subhananda .
QUANTUM DOTS, NANOSTRUCTURES, AND QUANTUM MATERIALS: GROWTH, CHARACTERIZATION, AND MODELING XVII, 2020, 11291
[32]   Quantum Confinement Explains Pump-Dependent Luminescence from Butyl-Terminated Si Quantum Dots [J].
Nikolaev, Valentin V. ;
Kaliteevski, Mikhail A. ;
Averkiev, Nikita S. .
JOURNAL OF PHYSICAL CHEMISTRY C, 2019, 123 (45) :27854-27861
[33]   Colloidal Quantum Dots: 5. Luminescence Features of Colloidal Quantum Dots [J].
Brichkin, S. B. ;
Spirin, M. G. ;
Tovstun, S. A. ;
Razumov, V. F. .
HIGH ENERGY CHEMISTRY, 2024, 58 (SUPPL 1) :S54-S80
[34]   Mcrostructure and optical properties of Ge(Si) dots grown on Si [J].
Wan, J ;
Tong, S ;
Jiang, ZM ;
Jin, G ;
Luo, YH ;
Liu, JL ;
Liao, XZ ;
Zou, J ;
Wang, KL .
QUANTUM DOT DEVICES AND COMPUTING, 2002, 4656 :89-94
[35]   Emission Enhancement of Ge/Si Quantum Dots in Hybrid Structures with Subwavelength Lattice of Al Nanodisks [J].
Zinovyev, Vladimir A. ;
Smagina, Zhanna V. ;
Zinovieva, Aigul F. ;
Bloshkin, Aleksei A. ;
Dvurechenskii, Anatoly V. ;
Rodyakina, Ekaterina E. ;
Stepikhova, Margarita V. ;
Peretokin, Artem V. ;
Novikov, Alexey V. .
NANOMATERIALS, 2023, 13 (17)
[36]   Impact of Annealing on Surface Morphology and Photoluminescence of Self-Assembled Ge and Si Quantum Dots [J].
Samavati, Alireza ;
Othaman, Zulkafli ;
Dabagh, Shadab ;
Ghoshal, Sib Krishna .
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2014, 14 (07) :5266-5271
[37]   Morphology and photoluminescence of ultrasmall size of Ge quantum dots directly grown on Si(001) substrate [J].
Wang Ke-Fan ;
Zhang Yang ;
Zhang Weifeng .
APPLIED SURFACE SCIENCE, 2012, 258 (06) :1935-1939
[38]   Precisely ordered Ge quantum dots on a patterned Si microring for enhanced light-emission [J].
Li, Yi ;
Cui, Chengcong ;
Song, Jinwen ;
Liu, Qiang ;
Yuan, Shuai ;
Zeng, Cheng ;
Xia, Jinsong .
NANOTECHNOLOGY, 2020, 31 (38)
[39]   Photoluminescence enhancement through vertical stacking of defect-engineered Ge on Si quantum dots [J].
Groiss, Heiko ;
Spindlberger, Lukas ;
Oberhumer, Peter ;
Schaeffler, Friedrich ;
Fromherz, Thomas ;
Grydlik, Martyna ;
Brehm, Moritz .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2017, 32 (02)
[40]   Effect of overgrowth temperature on the mid-infrared response of Ge/Si(001) quantum dots [J].
Yakimov, A. I. ;
Bloshkin, A. A. ;
Timofeev, V. A. ;
Nikiforov, A. I. ;
Dvurechenskii, A. V. .
APPLIED PHYSICS LETTERS, 2012, 100 (05)
12345