Structural characterization and luminescence of Ge/Si quantum dots

被引：1

作者：

Fonseca, A ^{[1
]}

Sobolev, NA

Leitao, JP

Carmo, MC

Franco, N

Presting, H

Sequeira, AD

机构：

[1] Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal

[2] ITN, P-2686953 Sacavem, Portugal

[3] Byelarussian Acad Sci, Inst Solid State & Semicond Phys, Minsk 220072, BELARUS

[4] Daimler Chrysler Res Ctr, D-89081 Ulm, Germany

来源：

ADVANCED MATERIALS FORUM II | 2004年 / 455-456卷

关键词：

quantum dots (QD); photoluminescence; X-ray reflectometry; reciprocal space maps;

D O I：

10.4028/www.scientific.net/MSF.455-456.540

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The photoluminescence (PL) and structural characterization of Ge/Si quantum dots (QD) samples grown by MBE is presented. The structural characterization was performed by means of high-resolution X-ray diffraction (reciprocal space mapping and rocking curves) and model-fitting of X-ray reflectometry. The observation of a diffraction peak associated with the QDs made possible the determination of their average Ge concentration. The PL measurements identified two subsets of QD. The dependence of the QD emission intensity on the measurement temperature can be well explained by the calculated density of states published previously [9].

引用

收藏

页码：540 / 544

页数：5

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