Electrical characterization of n-ZnO/p-Si heterojunction prepared by spray pyrolysis technique

被引：38

作者：

Bedia, F. Z. ^{[1
]}

Bedia, A. ^{[1
]}

Benyoucef, B. ^{[1
]}

Hamzaoui, S. ^{[2
]}

机构：

[1] Abou Bakr Belkaid Univ, Res Unit Mat & Renewable Energies, POB 119, Tilimsen 13000, Algeria

[2] Univ Sci & Technol Oran, Lab Electron Microscopy & Mat Sci, El Mnaouer Oran 31000, Algeria

来源：

8TH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCES, CSM8-ISM5 | 2014年 / 55卷

关键词：

ZnO/p-Si heterojunction; electricals properties; solar cell; JUNCTION SOLAR-CELLS; THIN-FILMS; FABRICATION; DEPOSITION; NANORODS;

D O I：

10.1016/j.phpro.2014.07.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The study reports the experimental and the electrical junction properties analysis of current-voltage characteristics of n-ZnO/p-Si heterostructures. Wide band gap semiconducting layer of n-type ZnO thin film was fabricated on p-type Si wafer with spray pyrolysis technique at 550C degrees to form n-ZnO/p-Si heterojunctions. The current-voltage characteristic of the n-Zn0/ p-Si heterojunction device has been measured at room temperature in the dark and under illumination (lamp/160 W). The characteristic parameters of the structure such as barrier height, ideality factor and series resistance were determined from the current-voltage measurement. (C) 2014 Elsevier B.V.

引用

页码：61 / 67

页数：7

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