Comparison of various methods for transferring graphene and few layer graphene grown by chemical vapor deposition to an insulating SiO2/Si substrate

被引：14

作者：

Antonova, I. V. ^{[1
]}

Golod, S. V. ^{[1
]}

Soots, R. A. ^{[1
]}

Komonov, A. I. ^{[1
]}

Seleznev, V. A. ^{[1
]}

Sergeev, M. A. ^{[1
]}

Volodin, V. A. ^{[1
,2
]}

Prinz, V. Ya ^{[1
]}

机构：

[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Pr Akad Lavrenteva 13, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Novosibirsk 630090, Russia

来源：

SEMICONDUCTORS | 2014年 / 48卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

MONOLAYER;

D O I：

10.1134/S1063782614060049

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The objective of this study is to compare the results of transferring graphene and few layer graphene (FKG) up to 5 nm thick, grown by chemical vapor deposition (CVD) at a reduced pressure to a SiO2/Si substrate using four different polymer films. The chosen transfer methods are based on the most promising (according to published data) materials: polymethyl methacrylate, polydimethylsiloxane, thermoscotch, and polycarbonate. It is shown that the most promising transfer method (minimum resistance and maximum carrier mobility) lies in the use of polycarbonate thin films with their dissolution in chloroform. In this case, the following parameters are steadily obtained: the graphene and FLG resistance is 250-900 Omega/a- and the carrier mobility is 900-2500 cm(2)/(V s).

引用

收藏

页码：804 / 808

页数：5

相关论文

共 18 条

[1] Extremely high response of electrostatically exfoliated few layer graphene to ammonia adsorption [J].

Antonova, I. V. ;

Mutilin, S. V. ;

Seleznev, V. A. ;

Soots, R. A. ;

Volodin, V. A. ;

Prinz, V. Ya .

NANOTECHNOLOGY, 2011, 22 (28)

[2] Tunable properties of few-layer graphene-N-methylpyrrolidone hybrid structures [J].

Antonova, Irina V. ;

Kotin, Igor A. ;

Soots, Regina A. ;

Volodin, Vladimir A. ;

Prinz, Victor Ya .

NANOTECHNOLOGY, 2012, 23 (31)

[3] Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures [J].

Britnell, L. ;

Gorbachev, R. V. ;

Jalil, R. ;

Belle, B. D. ;

Schedin, F. ;

Mishchenko, A. ;

Georgiou, T. ;

Katsnelson, M. I. ;

Eaves, L. ;

Morozov, S. V. ;

Peres, N. M. R. ;

Leist, J. ;

Geim, A. K. ;

Novoselov, K. S. ;

Ponomarenko, L. A. .

SCIENCE, 2012, 335 (6071) :947-950

[4] Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates [J].

Caldwell, Joshua D. ;

Anderson, Travis J. ;

Culbertson, James C. ;

Jernigan, Glenn G. ;

Hobart, Karl D. ;

Kub, Fritz J. ;

Tadjer, Marko J. ;

Tedesco, Joseph L. ;

Hite, Jennifer K. ;

Mastro, Michael A. ;

Myers-Ward, Rachael L. ;

Eddy, Charles R., Jr. ;

Campbell, Paul M. ;

Gaskill, D. Kurt .

ACS NANO, 2010, 4 (02) :1108-1114

[5] Millimeter-Size Single-Crystal Graphene by Suppressing Evaporative Loss of Cu During Low Pressure Chemical Vapor Deposition [J].

Chen, Shanshan ;

Ji, Hengxing ;

Chou, Harry ;

Li, Qiongyu ;

Li, Hongyang ;

Suk, Ji Won ;

Piner, Richard ;

Liao, Lei ;

Cai, Weiwei ;

Ruoff, Rodney S. .

ADVANCED MATERIALS, 2013, 25 (14) :2062-2065

[6] Production of a 100-m-long high-quality graphene transparent conductive film by roll-to-roll chemical vapor deposition and transfer process [J].

Kobayashi, Toshiyuki ;

Bando, Masashi ;

Kimura, Nozomi ;

Shimizu, Keisuke ;

Kadono, Koji ;

Umezu, Nobuhiko ;

Miyahara, Kazuhiko ;

Hayazaki, Shinji ;

Nagai, Sae ;

Mizuguchi, Yukiko ;

Murakami, Yosuke ;

Hobara, Daisuke .

APPLIED PHYSICS LETTERS, 2013, 102 (02)

[7] High carrier mobility in chemically modified graphene on an atomically flat high-resistive substrate [J].

Kotin, I. A. ;

Antonova, I. V. ;

Komonov, A. I. ;

Seleznev, V. A. ;

Soots, R. A. ;

Prinz, V. Ya .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2013, 46 (28)

[8] Wafer-Scale Synthesis and Transfer of Graphene Films [J].

Lee, Youngbin ;

Bae, Sukang ;

Jang, Houk ;

Jang, Sukjae ;

Zhu, Shou-En ;

Sim, Sung Hyun ;

Song, Young Il ;

Hong, Byung Hee ;

Ahn, Jong-Hyun .

NANO LETTERS, 2010, 10 (02) :490-493

[9] Large-Area Graphene Single Crystals Grown by Low-Pressure Chemical Vapor Deposition of Methane on Copper [J].

Li, Xuesong ;

Magnuson, Carl W. ;

Venugopal, Archana ;

Tromp, Rudolf M. ;

Hannon, James B. ;

Vogel, Eric M. ;

Colombo, Luigi ;

Ruoff, Rodney S. .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2011, 133 (09) :2816-2819

[10] Clean Transfer of Graphene for Isolation and Suspension [J].

Lin, Yung-Chang ;

Jin, Chuanhong ;

Lee, Jung-Chi ;

Jen, Shou-Feng ;

Suenaga, Kazu ;

Chiu, Po-Wen .

ACS NANO, 2011, 5 (03) :2362-2368