Optimization and improvement of a front graded bandgap CuInGaSe2 solar cell

This paper reports simulations of gradual bandgap CIGS absorber and its impact on the characteristics of a solar cell. The bandgap of the CIGS absorber varies linearly and drops from Eg(max) (at the junction limit) to Eg(min) (in the vicinity of the rear contact).We introduce an effective absorption coefficient based on this variation. We will demonstrate that this gradual profile contributes to an improvement up to 171 mV of the open circuit voltage V-oc of the cell that is linked to the modification of the internal electrical field distribution within the absorber. However, a joint reduction of 1.50 mA/cm(2) of short circuit current density, J(sc) is observed. Overall, the conversion efficiency increases from 19.2%, for a uniform bandgap absorber structure, to 24.9% in that case of gradual bandgap. Additionally, we investigate the impact of absorber thickness and temperature on cell characteristics.