Modeling direct interband tunneling. II. Lower-dimensional structures

被引：28

作者：

Pan, Andrew ^{[1
]}

Chui, Chi On ^{[1
,2
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[2] Univ Calif Los Angeles, Calif NanoSyst Inst, Los Angeles, CA 90095 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 05期

关键词：

FIELD-EFFECT TRANSISTORS; FETS; SOI;

D O I：

10.1063/1.4891528

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the applicability of the two-band Hamiltonian and the widely used Kane analytical formula to interband tunneling along unconfined directions in nanostructures. Through comparisons with k.p and tight-binding calculations and quantum transport simulations, we find that the primary correction is the change in effective band gap. For both constant fields and realistic tunnel field-effect transistors, dimensionally consistent band gap scaling of the Kane formula allows analytical and numerical device simulations to approximate non-equilibrium Green's function current characteristics without arbitrary fitting. This allows efficient first-order calibration of semiclassical models for interband tunneling in nanodevices. (C) 2014 AIP Publishing LLC.

引用

页数：8

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