Spin relaxation in silicon coupled quantum dots

被引：7

作者：

Pan, Wei ^{[1
]}

Yu, Xiao Zhu ^{[1
]}

Shen, Wen Zhong ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Dept Phys, Lab Condensed Matter Spect & Optoelect Phys, Shanghai 200030, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 01期

关键词：

HYDROGENATED NANOCRYSTALLINE SILICON; NEGATIVE MAGNETORESISTANCE; TRANSPORT; WELL;

D O I：

10.1063/1.3167817

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a detailed investigation for spin relaxation processes in silicon coupled quantum dots. Low-field magnetoconductance measurements have been employed to deduce phase dephasing and spin relaxation rates. On the basis of the dephasing theory containing triplet channel interaction, we have demonstrated that small energy transfer scattering process is the dominant dephasing mechanism, and strong electron-electron interaction results in an interdot spin-exchange relaxation process. Triplet-singlet relaxation is found to be another important spin relaxation process in the inner quantum dots, taking into account the triplet-singlet splitting induced by spin-orbit coupling. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3167817]

引用

页数：3

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