Ultra-thin Ti passivation mediated breakthrough in high quality Cu-Cu bonding at low temperature and pressure

被引：49

作者：

Panigrahi, Asisa Kumar ^{[1
]}

Bonam, Satish ^{[1
]}

Ghosh, Tamal ^{[1
]}

Singh, Shiv Govind ^{[1
]}

Vanjari, Siva Rama Krishna ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Sangareddy 502285, Telangana, India

来源：

MATERIALS LETTERS | 2016年 / 169卷

关键词：

Wafer-on-Wafer (WoW); Ti Passivation; 3D IC integration; Ultra-thin Ti;

D O I：

10.1016/j.matlet.2016.01.126

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Deposition of Ultra-thin Titanium (Ti) layer (3 nm) on Copper (Cu) surface inhibits surface oxidation upon exposure to ambient air as well as reduces surface roughness from about 2.1 nm (Cu only) to about 0.4 nm resulting in Cu-Cu bonding at a temperature as low as 160 degrees C and operating pressure as low as 2.5 bar. This simple passivation mechanism enhanced diffusion of Cu across the boundary and resulted in grain growth across the entire bonding layers as revealed by several methodical characterizations. This practical breakthrough has immense potential to usher us into practical realization of 3D IC integration. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：269 / 272

页数：4

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