Electron transport within bulk cubic boron nitride: A Monte Carlo simulation analysis

Through the use of a semi-classical three-valley Monte Carlo electron transport simulation analysis, we analyze the nature of the steady-state and transient electron transport processes that occur within the zinc-blende phase of bulk boron nitride. For the purposes of our steady-state analysis, the dependence of the electron drift velocity on the applied electric field strength is examined. For our transient electron transport analysis, however, we study how an ensemble of electrons, initially in thermal equilibrium, i.e., zero-field, responds to the sudden application of a constant and uniform applied electric field. The results obtained, corresponding to the specific case of bulk zinc-blende boron nitride, are then contrasted with those corresponding to a number of other compound semiconductors of interest within the III-V nitride semiconductor genome.