Electromigration induced incubation, drift and threshold in single-damascene copper interconnects

被引：6

作者：

Yokogawa, S ^{[1
]}

Takizawa, H ^{[1
]}

机构：

[1] NEC Corp Ltd, Electron Devices, Reliabil & Qual Control Dept, 3rd Syst LSI Div, Kawasaki, Kanagawa 2118666, Japan

来源：

PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2002年

关键词：

D O I：

10.1109/IITC.2002.1014909

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We measured electromigration incubation time and ionic drift velocity of copper interconnect using Kawasaki-Hu test structure (1) in the temperature range of 255-350degreesC. To estimate the electromigration threshold product of current density and line length, electromigration tests were performed with current densities in the range of 1.9-7.7 MA/cm(2). Measured results indicate remarkable incubation time of void growth in the direction of line, and it depends on a square of current density. On the other hand, drift velocity appears to be a linear dependent of current density. Consequently, both contributions must be considered on lifetime estimation of operating condition. The critical product of the test structure is 7735A/cm at 300degreesC.

引用

页码：127 / 129

页数：3