Electromigration induced incubation, drift and threshold in single-damascene copper interconnects

被引：6
作者：
Yokogawa, S [1 ]
Takizawa, H [1 ]
机构：
[1] NEC Corp Ltd, Electron Devices, Reliabil & Qual Control Dept, 3rd Syst LSI Div, Kawasaki, Kanagawa 2118666, Japan
来源：
PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2002年
关键词：
D O I：
10.1109/IITC.2002.1014909
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We measured electromigration incubation time and ionic drift velocity of copper interconnect using Kawasaki-Hu test structure (1) in the temperature range of 255-350degreesC. To estimate the electromigration threshold product of current density and line length, electromigration tests were performed with current densities in the range of 1.9-7.7 MA/cm(2). Measured results indicate remarkable incubation time of void growth in the direction of line, and it depends on a square of current density. On the other hand, drift velocity appears to be a linear dependent of current density. Consequently, both contributions must be considered on lifetime estimation of operating condition. The critical product of the test structure is 7735A/cm at 300degreesC.
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收藏
页码：127 / 129
页数：3
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