On the Variability of HfOx RRAM: From Numerical Simulation to Compact Modeling

被引：0

作者：

Guan, Ximeng ^{[1
]}

Yu, Shimeng

Wong, H. -S. Philip

机构：

[1] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA

来源：

NANOTECHNOLOGY 2012, VOL 2: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL | 2012年

关键词：

RRAM; resistive switching; compact model; variation; SWITCHING PARAMETER VARIATION; DEVICE; MEMORY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The trap-assisted conduction and filamentary switching mechanisms of the HfOx-based resistive memory are studied. To reproduce the experimental I-V curves, a numerical simulator is developed. Comparison with experiments shows that the cycle-to-cycle variation in the RRAM is mainly due to the variation in the gap distance between the filament tips and the electrode. A set of analytical equations suitable for compact modeling is then derived to capture the switching behavior of metal oxide based RRAM (OxRRAM). By introducing the random perturbations of the gap size, the model successfully reproduces the measured resistance variation of the multi-level RRAM cell.

引用

页码：815 / 820

页数：6

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