Planar-integrated single-crystalline perovskite photodetectors

被引：641

作者：

Saidaminov, Makhsud I. ^{[1
]}

Adinolfi, Valerio ^{[2
]}

Comin, Riccardo ^{[2
]}

Abdelhady, Ahmed L. ^{[1
]}

Peng, Wei ^{[1
]}

Dursun, Ibrahim ^{[1
]}

Yuan, Mingjian ^{[2
]}

Hoogland, Sjoerd ^{[2
]}

Sargent, Edward H. ^{[2
]}

Bakr, Osman M. ^{[1
]}

机构：

[1] King Abdullah Univ Sci & Technol KAUST, Solar & Photovolta Engn Ctr, Div Phys Sci & Engn, Thuwal 239556900, Saudi Arabia

[2] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada

来源：

NATURE COMMUNICATIONS | 2015年 / 6卷

基金：

加拿大自然科学与工程研究理事会;

关键词：

ENERGY ELECTRON-DIFFRACTION; LEAD BROMIDE PEROVSKITE; CHARGE-LIMITED CURRENTS; VOLTAGE SOLAR-CELLS; CARRIER DIFFUSION; HIGH-GAIN; LIGHT; ABSORBER; SURFACES; SOLIDS;

D O I：

10.1038/ncomms9724

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Hybrid perovskites are promising semiconductors for optoelectronic applications. However, they suffer from morphological disorder that limits their optoelectronic properties and, ultimately, device performance. Recently, perovskite single crystals have been shown to overcome this problem and exhibit impressive improvements: low trap density, low intrinsic carrier concentration, high mobility, and long diffusion length that outperform perovskite-based thin films. These characteristics make the material ideal for realizing photodetection that is simultaneously fast and sensitive; unfortunately, these macroscopic single crystals cannot be grown on a planar substrate, curtailing their potential for optoelectronic integration. Here we produce large-area planar-integrated films made up of large perovskite single crystals. These crystalline films exhibit mobility and diffusion length comparable with those of single crystals. Using this technique, we produced a high-performance light detector showing high gain (above 10(4) electrons per photon) and high gain-bandwidth product (above 10(8) Hz) relative to other perovskite-based optical sensors.

引用

页数：7

共 35 条

[1] Photojunction Field-Effect Transistor Based on a Colloidal Quantum Dot Absorber Channel Layer [J].