Domain wall pinning in ferromagnetic structures fabricated by focused ion beam

被引:14
作者
Kläui, M
Vaz, CAF
Lapicki, A
Suzuki, T
Cui, Z
Bland, JAC
机构
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[2] Toyota Technol Inst, Informat Storage Mat Lab, Nagoya, Aichi 4688511, Japan
[3] Rutherford Appleton Lab, Didcot OX11 0QX, Oxon, England
关键词
focused ion beam; domain wall pinning; magnetic wires; prepatterned silicon; notches;
D O I
10.1016/j.mee.2004.03.052
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present an experimental study of different methods to fabricate small magnetic wire structures with notches and their use to study domain wall pinning at constrictions. Direct patterning of continuous Co films with focused ion beam is shown to cause severe damage to the material, which alters the magnetic properties significantly. Patterning silicon substrates and subsequent film deposition yields well defined devices, which are used to show how domain walls can be controllably injected into wires and then pinned at constrictions. The pinning strength is then deduced by the field needed to depin the domain wall. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:785 / 789
页数:5
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