Novel method of low-vacuum plasma triode sputtering

被引：9

作者：

Golan, G ^{[1
]}

Axelevitch, A ^{[1
]}

机构：

[1] Open Univ, Technol Acad Inst Holon, IL-58102 Holon, Israel

来源：

MICROELECTRONICS JOURNAL | 2002年 / 33卷 / 08期

关键词：

thin film; tetrode sputtering; silicom; titanium;

D O I：

10.1016/S0026-2692(02)00030-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel sputtering method based on a triode-sputtering set-up is presented. This low-vacuum plasma method enables sputtering of thin films at a pressure range 0.2-5 mTorr. using a supported gas discharge. The new method is capable of an independent control of the sputtering rate vs. sputtering voltage. Temperature distribution of electrons in the plasma was experimentally studied, using the Langmuir probe. Experimental sputtering results of Ti and Si layers, using this method, are described. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：651 / 657

页数：7

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