Realization of Unexplored Frequency Terahertz Quantum-Cascade Lasers by using III Nitride Semiconductors

被引：0

作者：

Terashima, Wataru ^{[1
,2
]}

Kamata, Norihiko ^{[3
]}

Hirayama, Hideki ^{[1
,2
]}

机构：

[1] RIKEN, 2-1 Hirosawa, Wako, Saitama 3510198, Japan

[2] RIKEN Ctr Adv Photon RAP, 519-1399 Aoba Aramaki, Sendai, Miyagi 9800845, Japan

[3] Saitama Univ, Sakura Ku, 255 Shimo Okubo, Saitama 3388570, Japan

来源：

2016 INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC) | 2016年

关键词：

terahertz; quantum-cascade laser; III nitride semiconductor; MBE; MOCVD;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

III Nitride semiconductor is a material having a potential for realizing wide frequency range of quantum cascade lasers (QCLs) including unexplored frequency from 5 to 12 THz. We fabricated GaN/AlGaN THz-QCLs with novel pure-3-level design active regions and achieved lasing at frequency between 5.4-7 THz.

引用

页数：2

共 2 条

[1] Spontaneous emission from GaN/AlGaN terahertz quantum cascade laser grown on GaN substrate
Terashima, Wataru
Hirayama, Hideki
[J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8): : 2302 - 2304
[2] The Utility of Droplet Elimination by Thermal Annealing Technique for Fabrication of GaN/AlGaN Terahertz Quantum Cascade Structure by Radio Frequency Molecular Beam Epitaxy
Terashima, Wataru
Hirayama, Hideki
[J]. APPLIED PHYSICS EXPRESS, 2010, 3 (12)

← 1 →