Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells

被引：5
|
作者：
Vinnichenko, M. Ya. [1 ]
Vorobjev, L. E. [1 ]
Firsov, D. A. [1 ]
Mashko, M. O. [1 ]
Balagula, R. M. [1 ]
Belenky, G. [2 ]
Shterengas, L. [2 ]
Kipshidze, G. [2 ]
机构：
[1] St Petersburg State Polytech Univ, St Petersburg 195251, Russia
[2] SUNY Stony Brook, Dept Elect & Comp Engn, Stony Brook, NY 11794 USA
来源：
SEMICONDUCTORS | 2013年 / 47卷 / 11期
基金：
俄罗斯基础研究基金会;
关键词：
Carrier Concentration; Quantum Well; Optical Phonon; Laser Structure; Current Dependence;
D O I：
10.1134/S1063782613110237
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The current dependences of spontaneous luminescence in mid-IR injection lasers with InGaAsSb/InAlGaAsSb quantum wells are experimentally studied in the subthreshold and lasing modes. The current dependence of the carrier concentration is determined using the current dependence of the total spontaneous luminescence. A lack of carrier concentration saturation with current in the lasing mode was observed. It is shown that this can be due to carrier heating at low quantum-confinement levels and an increase in light absorption by free holes in the waveguide.
引用
收藏
页码：1513 / 1516
页数：4
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