A 50-mW, 386 GHz/mm2 Wideband Amplifier in 0.13-μm CMOS Technology

被引：0
|
作者：
Chen, Hsien-Ku [1 ]
Wang, Tao [2 ]
Lin, Kuan-Ting [1 ]
Chen, Hsiao-Chin [3 ]
Lui, Shey-Shi [1 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Elect Engn, 1 Roosevelt Rd, Taipei, Taiwan
[2] Chang Gung Univ, Dept Elect Engn, Taoyuan, Taiwan
[3] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei, Taiwan
来源：
2010 ASIA-PACIFIC MICROWAVE CONFERENCE | 2010年
关键词：
wideband amplifier; distributed amplifier; DA; stacked inductor; matching; CMOS integrated circuits; millimeter-wave; GBW;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A wideband amplifier with low power consumption (50 mW) and small chip size (0.44 mm(2)) is demonstrated in a 0.13 mu m CMOS technology. A power gain of 9.5 dB is measured with a 3 dB bandwidth covering from 0.1 GHz to 57 GHz as well as a gain-bandwidth-product (GBW) of 170 GHz. The proposed wideband amplifier has distinguished itself with the state-of-theart performance of GBW/Pdiss (3.4 GHz/mW) and GBW/chip-area (386 GHz/mm(2)) [1-4], [6-7] which reveals its ability in accomplishing a wideband amplification with reasonable power and area consumptions.
引用
收藏
页码：774 / 777
页数：4
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