Thermal properties and degradation behavior of red-emitting high-power diode lasers

被引：14
作者：
Tien, Tran Quoc
Weik, Fritz
Tomm, Jens W.
Sumpf, Bernd
Zorn, Martin
Zeimer, Ute
Erbert, Goetz
机构：
[1] Max Born Inst Nichtlineare Opt & Kurzzeitspekt, D-12489 Berlin, Germany
[2] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 18期
关键词：
D O I：
10.1063/1.2374693
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The thermal properties and the degradation behavior of high-power broad-area diode lasers emitting at 650 nm are analyzed. Imaging thermography is applied to assess the bulk temperature while the facet temperature is measured by micro-Raman spectroscopy. Although no visible facet alteration is observed, power degradation is found to be accompanied by increased temperatures at the facets. The immediate vicinity of them also turns out to be the starting point for the creation of defect networks within the quantum well seen in cathodoluminescence images. The observed behavior is compared to that known for near-infrared emitting devices. (c) 2006 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 15 条
  • [1] Baeumler M, 1998, INST PHYS CONF SER, V160, P467
  • [2] FRIGERI C, 1997, I PHYS C SER, V160, P479
  • [3] Deep level emission from high-power diode laser bars detected by multispectral infrared imaging
    Kozlowska, A
    Wawrzyniak, P
    Tomm, JW
    Weik, F
    Elsaesser, T
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (15) : 1 - 3
  • [4] High power 600 nm range lasers grown by solid source molecular beam epitaxy
    Orsila, S
    Toivonen, M
    Savolainen, P
    Vilokkinen, V
    Melanen, P
    Pessa, M
    Saarinen, M
    Uusimaa, P
    Corvini, P
    Fang, F
    Jansen, M
    Nabiev, R
    [J]. IN-PLANE SEMICONDUCTOR LASERS III, 1999, 3628 : 203 - 208
  • [5] Mounting of laser bars on copper heat sinks using Au/Sn solder and CuW submounts
    Pittroff, W
    Erbert, G
    Klein, A
    Staske, R
    Sumpf, B
    Traenkle, G
    [J]. 52ND ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, 2002 PROCEEDINGS, 2002, : 276 - 281
  • [6] Rechenberg I, 1998, INST PHYS CONF SER, V160, P479
  • [7] Novel passivation process for the mirror facets of Al-free active-region high-power semiconductor diode lasers
    Ressel, P
    Erbert, G
    Zeimer, U
    Häusler, K
    Beister, G
    Sumpf, B
    Klehr, A
    Tränkle, G
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (05) : 962 - 964
  • [8] Facet temperature reduction by a current blocking layer at the front facets of high-power InGaAs/AlGaAs lasers
    Rinner, F
    Rogg, J
    Kelemen, MT
    Mikulla, M
    Weimann, G
    Tomm, JW
    Thamm, E
    Poprawe, R
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (03) : 1848 - 1850
  • [9] Observation of deep level defects within the waveguide of red-emitting high-power diode lasers
    Ropers, C
    Tien, TQ
    Lienau, C
    Tomm, JW
    Brick, P
    Linder, N
    Mayer, B
    Müller, M
    Tautz, S
    Schmid, W
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (13)
  • [10] SUMPF B, 2006, P SOC PHOTO-OPT INS, V6133, P78
12