Electronic Band Structure of Rhenium Dichalcogenides

被引：19

作者：

Gunasekera, Surani M. ^{[1
]}

Wolverson, Daniel ^{[1
]}

Hart, Lewis S. ^{[1
]}

Mucha-Kruczynski, Marcin ^{[1
]}

机构：

[1] Univ Bath, Dept Phys, Ctr Nanosci & Nanotechnol, Bath BA2 7AY, Avon, England

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2018年 / 47卷 / 08期

基金：

英国工程与自然科学研究理事会;

关键词：

ReSe2; ReS2; rhenium dichalcogenides; angle-resolved photoemission; band structure; ATOMICALLY THIN; CRYSTAL-STRUCTURE; TRANSITION; RES2; PSEUDOPOTENTIALS;

D O I：

10.1007/s11664-018-6239-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The band structures of bulk transition metal dichalcogenides ReS2 and ReSe2 are presented, showing the complicated nature of interband transitions in these materials, with several close-lying band gaps. Three-dimensional plots of constant energy surfaces in the Brillouin zone at energies near the band extrema are used to show that the valence band maximum and conduction band minimum may not be located at special high symmetry points. We find that both materials are indirect gap materials and that one must be careful to consider the whole Brillouin zone volume in addressing this question.

引用

页码：4314 / 4320

页数：7

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