High-power quantum-dot superluminescent diodes with p-doped active region

被引：23

作者：

Rossetti, Marco ^{[1
]}

Li, Lianhe

Fiore, Andrea

Occhi, Lorenzo

Velez, Christian

Mikhrin, Sergey

Kovsh, Alexey

机构：

[1] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland

[2] EXALOS AG, CH-8952 Schlieren, Switzerland

[3] Nanosemicond GmbH, D-44263 Dortmund, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 17-20期

关键词：

gain; optical coherence tomography (OCT); p-doping; quantum dot (QD); superluminescent diode; temperature characteristics;

D O I：

10.1109/LPT.2006.882303

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate the use of p-doping in the active region of quantum-dot superluminescent diodes. Modal gain measurements and light output-current characteristics prove that p-doping is beneficial for achieving higher gain, higher output power, and better temperature stability.

引用

页码：1946 / 1948

页数：3

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