Defect-induced structural and ferromagnetic properties of hydrogenated Mn-doped ZnO film

被引:3
作者
Gao, Qianqian [1 ]
Dai, Yuqiang [1 ]
Yu, Qingxuan [2 ]
Li, Chengbo [1 ]
Li, Xianchang [1 ]
Cui, Chaojun [1 ]
Zhang, Juan [3 ,4 ]
Chen, Haibo [3 ]
机构
[1] Anyang Inst Technol, Coll Math & Phys, Anyang 455000, Peoples R China
[2] Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China
[3] Anhui Earthquake Adm, Hefei 230026, Peoples R China
[4] Anhui Earthquake Adm, Hefei 230026, Peoples R China
关键词
ROOM-TEMPERATURE FERROMAGNETISM; MAGNETIC SEMICONDUCTORS; THIN-FILMS; NANOPARTICLES; PHOTOLUMINESCENCE; NANORODS; ATMOSPHERE; DEPENDENCE; INJECTION;
D O I
10.1007/s10854-015-3805-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The influence of hydrogenated annealing temperature on the room temperature ferromagnetism of Mn-doped ZnO films was investigated. The X-ray diffraction and X-ray photoelectron spectra reveal Mn2+ ions have been incorporated into wurtzite ZnO lattices. The saturation magnetization increases quickly with the increasing N-2/H-2-annealing temperature (T-an) until the temperature reaches 750 A degrees C, and then the saturation magnetization approaches a constant value. Some foamlike materials appear in the non-continuous films when the T-an is 640 A degrees C or above, and saturation magnetization of these films become stronger than that of the (600-630 A degrees C) annealed films. The results of X-ray photoelectron spectra, SEM images and photoluminescence spectrum suggest that oxygen vacancy concentration of the annealed films increases with increasing T-an, which leads to the ferromagnetism of the Mn-doped ZnO film. These results demonstrate that oxygen vacancies, especially singly ionized oxygen vacancies, play a crucial role in mediating ferromagnetism of the Mn-doped ZnO film.
引用
收藏
页码:697 / 704
页数:8
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