Honing the accuracy of extreme ultraviolet optical system testing: at-wavelength and visible-light measurements of the ETS Set-2 projection optic

被引:20
作者
Goldberg, KA [1 ]
Naulleau, P [1 ]
Bokor, J [1 ]
Chapman, HN [1 ]
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Ctr Xray Opt, Berkeley, CA 94720 USA
来源
EMERGING LITHOGRAPHIC TECHNOLOGIES VI, PTS 1 AND 2 | 2002年 / 4688卷
关键词
interferometry; extreme ultraviolet lithography; EUV; at-wavelength testing; EUV visible-light comparison;
D O I
10.1117/12.472306
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
As the quality of optical systems for extreme ultraviolet lithography improves, high-accuracy wavefront metrology for alignment and qualification becomes ever more important. To enable the development of diffraction-limited EUV projection optics, visible-light and EUV interferometries must work in close collaboration. We present a detailed comparison of EUV and visible-light wavefront measurements performed across the field of view of a lithographic-quality EUV projection optical system designed for use in the Engineering Test Stand developed by the Virtual National Laboratory and the EUV Limited Liability Company. The comparisons reveal that the present level of RMS agreement ties in the 0.3-0.4-nm range. Astigmatism is the most significant aberration component for the alignment of this optical system; it is also the dominant term in the discrepancy, and the aberration with the highest measurement uncertainty. With EUV optical systems requiring total wavefront quality in the; lambda(Euv)/50 (0.25 nm) range, and even higher surface-figure quality for the individual mirror elements, improved accuracy through future comparisons, and additional studies, are required.
引用
收藏
页码:329 / 337
页数:5
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