Pressure-assisted lateral nanostructuring of the epitaxial silicon layers with SiGe quantum wells

被引：0
|
作者：
Antonovala, I. V. [1 ]
Gulyaev, M. B.
Skuratov, V. A.
Soots, R. A.
Obodnikov, V. I.
Misiuk, A.
Zaumseil, P.
机构：
[1] Russian Acad Sci, SB, Inst Semicond Phys, Novosibirsk 630090, Russia
[2] Joint Inst Nucl Res, Dubna 141980, Russia
[3] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
[4] IHP Microelect, D-15236 Frankfurt, Germany
来源：
HIGH PRESSURE TECHNOLOGY OF NANOMATERIALS | 2006年 / 114卷
关键词：
SiGe; quantum well; ion implantation; strain; hydrostatic pressure; annealing; precipitation;
D O I：
10.4028/www.scientific.net/SSP.114.291
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Transformations of the SiGe/Si superlattice structures, either annealed at high pressure, or irradiated by high energy ions and subjected to post-implantation annealing, were studied and compared. Both types of treatments were found to lead to the formation of recharged defects clusters, resulting in the appearance of peaks on C-V characteristics, shrinkage of Ge profiles registered by SIMS technique after annealing, and disappearance of peaks in the free carrier profiles. The effects were more pronounced in the case of high energy ion implantation. The results are explained by the vacancy - assisted precipitation of Ge in SiGe layers.
引用
收藏
页码：291 / 296
页数：6
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