P-type silicon drift detectors

被引：0

作者：

Walton, JT

Krofcheck, D

ODonnell, R

Odyniec, G

Partlan, MD

Wang, NW

机构：

[1] Lawrence Berkeley Natl. Laboratory, University of California, Berkeley

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1996年 / 377卷 / 2-3期

关键词：

D O I：

10.1016/0168-9002(96)00215-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Preliminary results on 16 cm(2), position-sensitive silicon drift detectors, fabricted for the first time on p-type silicon substrates, are presented. The detectors were designed, fabricated, and tested recently at LBL and show interesting properties which make them attractive for use in future physics experiments. A pulse count rate of approximately 8 x 10(6) s(-1) was demonstrated by the p-type silicon drift detectors. This count rate estimate was derived by measuring simultaneous tracks produced by a laser which was collimated using a photolithographic mask.

引用

页码：357 / 361

页数：5

共 7 条

[1] MEASUREMENTS OF DEGRADATION OF SILICON DETECTORS AND ELECTRONICS IN VARIOUS RADIATION ENVIRONMENTS [J].