A 42 ppm/°C 0.7V 47 nW Low-Complexity All-MOSFET Sub-Threshold Voltage Reference

被引：8

作者：

Liang, Yuhua ^{[1
]}

Zhu, Zhangming ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, 2 South Taibai Rd, Xian 710071, Shaanxi, Peoples R China

来源：

JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS | 2018年 / 27卷 / 07期

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

Voltage reference; sub-threshold; low power; low complexity; CMOS BANDGAP REFERENCE;

D O I：

10.1142/S0218126618501050

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A low-power, low-supply, low-complexity all-MOSFET voltage reference is implemented in 0.18 mu m CMOS process. With the proposed architecture, the number of the transistors can be reduced to the greatest extent. As a result, the supply voltage can not only be decreased to as low as 0.7 V, but the power consumption can also be optimized significantly. Simulation results show that the power consumption is 47 nW, at a supply of 0.7 V. A temperature coefficient (TC) of 42 ppm/degrees C is achieved when the temperature ranges from -20 degrees C to 80 degrees C. At room temperature, the voltage reference features a line regulation (LR) of 2.66%/V.

引用

页数：8

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