Effects of isotopic substitution on the phonons of van der Waals crystals: the case of hexagonal boron nitride

被引:12
作者
Cusco, R. [1 ]
Edgar, J. [2 ]
Liu, S. [2 ]
Cassabois, G. [3 ]
Gil, B. [3 ]
Artus, L. [1 ]
机构
[1] CSIC, ICTJA, Inst Jaume Almera, Lluis Sole & Sabaris S-N, E-08028 Barcelona, Spain
[2] Kansas State Univ, Dept Chem Engn, Durland Hall, Manhattan, KS 66506 USA
[3] Univ Montpellier, CNRS, UMR 5221, L2C, F-34095 Montpellier, France
基金
美国国家科学基金会;
关键词
van der Waals crystals; phonon anharmonicity; isotopic substitution; Raman scattering; TEMPERATURE-DEPENDENCE; RAMAN-SCATTERING; SEMICONDUCTORS; POLARITONS; GE;
D O I
10.1088/1361-6463/ab1cab
中图分类号
O59 [应用物理学];
学科分类号
摘要
The recent availability of isotopically pure samples of hexagonal boron nitride (h-BN) has allowed the isotopic substitution effects to be studied in this highly interesting layered crystal. Here, we review the application of Raman scattering to investigate phonon anharmonic decay and its particularities in layered crystals, exemplified by h-BN. The modification of the phonon spectrum and anharmonic phonon decay paths in isotopically pure samples is specifically addressed. Detailed information about phonon lifetimes and decay channels is obtained for h-BN from a thorough analysis of temperature-dependent Raman scattering measurements in the light of density functional theory and perturbation theory calculations. The phonon lifetime is substantially increased in isotopically pure crystals, which may have important implications for the development of low-loss h-BN based phonon-polariton devices. On account of the low cation mass, isotopic substitution substantially alters the dominant phonon decay pathways and changes the strength of phonon anharmonic interactions.
引用
收藏
页数:8
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