Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition

被引：43

作者：

Lu, Xing ^{[1
]}

Ma, Jun ^{[1
]}

Jiang, Huaxing ^{[1
]}

Liu, Chao ^{[1
]}

Lau, Kei May ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 10期

关键词：

CAT-CVD SIN; TRANSISTOR STRUCTURES; LAYER; THIN; INTERFACES; DEVICES; HEMTS; HFO2; GAN;

D O I：

10.1063/1.4895677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the use of SiNx grown in situ by metal-organic chemical vapor deposition as the gate dielectric for AlN/GaN metal-insulator-semiconductor (MIS) structures. Two kinds of trap states with different time constants were identified and characterized. In particular, the SiNx/AlN interface exhibits remarkably low trap state densities in the range of 10(11)-10(12) cm(-2) eV(-1). Transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the in situ SiNx layer can provide excellent passivation without causing chemical degradation to the AlN surface. These results imply the great potential of in situ SiNx as an effective gate dielectric for AlN/GaN MIS devices. (C) 2014 AIP Publishing LLC.

引用

页数：4

共 24 条

[1] Very low sheet resistance and Shubnikov-de-Haas oscillations in two-dimensional electron gases at ultrathin binary AlN/GaN heterojunctions [J].

Cao, Yu ;

Wang, Kejia ;

Orlov, Alexei ;

Xing, Huili ;

Jena, Debdeep .

APPLIED PHYSICS LETTERS, 2008, 92 (15)

[2] Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics [J].

Chang, Y. C. ;

Huang, M. L. ;

Chang, Y. H. ;

Lee, Y. J. ;

Chiu, H. C. ;

Kwo, J. ;

Hong, M. .

MICROELECTRONIC ENGINEERING, 2011, 88 (07) :1207-1210

[3] AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation [J].

Cheng, Kai ;

Degroote, S. ;

Leys, M. ;

Medjdoub, F. ;

Derluyn, J. ;

Sijmus, B. ;

Germain, M. ;

Borghs, G. .

JOURNAL OF CRYSTAL GROWTH, 2011, 315 (01) :204-207

[4] Impact of in situ SiNx layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures [J].

Cho, E. ;

Seo, S. ;

Jin, C. ;

Pavlidis, D. ;

Fu, G. ;

Tuerck, J. ;

Jaegermann, W. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (05) :2079-2083

[5] AlN/GaN HEMTs with high-κ ALD HfO2 or Ta2O5 gate insulation [J].

Deen, David ;

Storm, David ;

Meyer, David ;

Katzer, D. Scott ;

Bass, Robert ;

Binari, Steven ;

Gougousi, Theodosia .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8) :2420-2423

[6] Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer -: art. no. 054501 [J].

Derluyn, J ;

Boeykens, S ;

Cheng, K ;

Vandersmissen, R ;

Das, J ;

Ruythooren, W ;

Degroote, S ;

Leys, MR ;

Germain, M ;

Borghs, G .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (05)

[7] Electronic surface and dielectric interface states on GaN and AlGaN [J].

Eller, Brianna S. ;

Yang, Jialing ;

Nemanich, Robert J. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2013, 31 (05)

[8] Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors [J].

Fagerlind, M. ;

Allerstam, F. ;

Sveinbjornsson, E. O. ;

Rorsman, N. ;

Kakanakova-Georgieva, A. ;

Lundskog, A. ;

Forsberg, U. ;

Janzen, E. .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (01)

[9] Fabrication and Characterization of Thin-Barrier Al0.5Ga0.5N/AlN/GaN HEMTs [J].

Felbinger, Jonathan G. ;

Fagerlind, Martin ;

Axelsson, Olle ;

Rorsman, Niklas ;

Gao, Xiang ;

Guo, Shiping ;

Schaff, William J. ;

Eastman, Lester F. .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (07) :889-891

[10] Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions [J].

Ganguly, Satyaki ;

Verma, Jai ;

Li, Guowang ;

Zimmermann, Tom ;

Xing, Huili ;

Jena, Debdeep .

APPLIED PHYSICS LETTERS, 2011, 99 (19)

← 1 2 3 →